中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Interfacial energy level bending in a crystalline p/p-type organic heterostructure

文献类型:期刊论文

作者Zhu F ; Grobosch M ; Treske U ; Knupfer M ; Huang LZ ; Ji SL ; Yan DH
刊名applied physics letters
出版日期2011
卷号98期号:20
关键词FIELD-EFFECT TRANSISTORS WEAK EPITAXY GROWTH THIN-FILMS COPPER PHTHALOCYANINE ELECTRONIC-STRUCTURE PHOTOEMISSION SEMICONDUCTORS
ISSN号0003-6951
通讯作者knupfer m
中文摘要a conduction channel was observed at the heterointerface of the crystalline p-type organic films copper phthalocyanine (cupc) and 2,5-bis(4-biphenylyl) bithiophene (bp2t). energy level bending at the interface is confirmed by photoemission spectroscopy, which verifies a charge transfer between cupc and bp2t. this provides a further route to utilize interfacial electronic properties in functional devices and also documents the importance of reconsidering the interfacial electronic structure of organic heterostructures. (c) 2011 american institute of physics. [doi: 10.1063/1.3592994]
收录类别SCI收录期刊论文
语种英语
WOS记录号WOS:000290812100063
公开日期2012-06-11
源URL[http://ir.ciac.jl.cn/handle/322003/44628]  
专题长春应用化学研究所_长春应用化学研究所知识产出_期刊论文
推荐引用方式
GB/T 7714
Zhu F,Grobosch M,Treske U,et al. Interfacial energy level bending in a crystalline p/p-type organic heterostructure[J]. applied physics letters,2011,98(20).
APA Zhu F.,Grobosch M.,Treske U.,Knupfer M.,Huang LZ.,...&Yan DH.(2011).Interfacial energy level bending in a crystalline p/p-type organic heterostructure.applied physics letters,98(20).
MLA Zhu F,et al."Interfacial energy level bending in a crystalline p/p-type organic heterostructure".applied physics letters 98.20(2011).

入库方式: OAI收割

来源:长春应用化学研究所

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