High-Performance4H-SiC-based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3SiO2 Films
文献类型：期刊论文
| 作者 | Zhang, Feng ; Sun, Guosheng ; Huang, Huolin ; Wu, Zhengyun ; Wang, Lei ; Zhao, Wanshun ; Liu, Xingfang ; Yan, Guoguo ; Zheng, Liu ; Dong, Lin ; Zeng, Yiping |
| 刊名 | ieee electron device letters
 |
| 出版日期 | 2011 |
| 卷号 | 32期号:12页码:1722-1724 |
| ISSN号 | 07413106 |
| 关键词 | Integrated circuits Metal insulator boundaries Photodetectors Semiconducting silicon compounds Semiconductor insulator boundaries Silicon carbide |
| 通讯作者 | zhang, f.(fzhang@semi.ac.cn) |
| 学科主题 | 半导体材料 |
| 收录类别 | EI |
| 语种 | 英语 |
| 公开日期 | 2012-06-14 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23114]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhang, Feng,Sun, Guosheng,Huang, Huolin,et al. High-Performance4H-SiC-based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3SiO2 Films[J]. ieee electron device letters,2011,32(12):1722-1724. |
| APA | Zhang, Feng.,Sun, Guosheng.,Huang, Huolin.,Wu, Zhengyun.,Wang, Lei.,...&Zeng, Yiping.(2011).High-Performance4H-SiC-based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3SiO2 Films.ieee electron device letters,32(12),1722-1724. |
| MLA | Zhang, Feng,et al."High-Performance4H-SiC-based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3SiO2 Films".ieee electron device letters 32.12(2011):1722-1724. |
入库方式： OAI收割
来源：半导体研究所
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