Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy
文献类型：期刊论文
| 作者 | Jia, Caihong ; Chen, Yonghai ; Guo, Yan ; Liu, Xianglin ; Yang, Shaoyan ; Zhang, Weifeng ; Wang, Zhanguo |
| 刊名 | nanoscale research letters
 |
| 出版日期 | 2011 |
| 卷号 | 6页码:1-5 |
| 关键词 | Photons Valence bands X ray photoelectron spectroscopy |
| ISSN号 | 19317573 |
| 通讯作者 | chen, y.(yhchen@semi.ac.cn) |
| 学科主题 | 半导体材料 |
| 收录类别 | EI |
| 语种 | 英语 |
| 公开日期 | 2012-06-14 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23139]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Jia, Caihong,Chen, Yonghai,Guo, Yan,et al. Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy[J]. nanoscale research letters,2011,6:1-5. |
| APA | Jia, Caihong.,Chen, Yonghai.,Guo, Yan.,Liu, Xianglin.,Yang, Shaoyan.,...&Wang, Zhanguo.(2011).Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy.nanoscale research letters,6,1-5. |
| MLA | Jia, Caihong,et al."Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy".nanoscale research letters 6(2011):1-5. |
入库方式： OAI收割
来源：半导体研究所
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