Theoretical study of polarization-doped GaN-based light-emitting diodes
文献类型：期刊论文
| ; | |
| 作者 | Zhang, L.; Ding, K.; Liu, N.X.; Wei, T.B.; Ji, X.L.; Ma, P.; Yan, J.C.; Wang, J.X.; Zeng, Y.P.; Li, J.M. |
| 刊名 | applied physics letters
 ; Applied Physics Letters
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 98期号:10页码:101110 |
| 关键词 | Electron injection Gallium alloys Gallium nitride Light Light emission Organic light emitting diodes(OLED) Polarization Electron Injection Gallium Alloys Gallium Nitride Light Light Emission Organic Light Emitting Diodes(Oled) Polarization |
| ISSN号 | 00036951 ; 00036951 |
| 通讯作者 | zhang, l.(zhanglian07@semi.ac.cn) |
| 英文摘要 | Insufficient hole injection is a major impediment to the luminescence efficiency of III-nitride light-emitting diodes(LEDs). In our previous work by Zhang[Appl. Phys. Lett.97,062103(2010)], high-density mobile three-dimensional hole gas is obtained in Mg-doped Al composition graded AlGaN layer with Al composition linearly decreasing from a certain value to0. In this paper, it is revealed by a theoretical study that the hole injection efficiency in blue-light GaN-based LEDs can be greatly enhanced by using this polarization-doped method. An increase in the electroluminescence intensity and the internal quantum efficiency in polarization-doped GaN-based LEDs is observed, in comparison with a conventional LED.?2011 American Institute of Physics. |
| 学科主题 | 半导体材料 ; 半导体材料 |
| 收录类别 | EI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2012-06-14 ; 2012-06-14 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23143]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 通讯作者 | Zhang, L.(zhanglian07@semi.ac.cn) |
| 推荐引用方式 GB/T 7714 | Zhang, L.,Ding, K.,Liu, N.X.,et al. Theoretical study of polarization-doped GaN-based light-emitting diodes, Theoretical study of polarization-doped GaN-based light-emitting diodes[J]. applied physics letters, Applied Physics Letters,2011, 2011,98, 98(10):101110, 101110. |
| APA | Zhang, L..,Ding, K..,Liu, N.X..,Wei, T.B..,Ji, X.L..,...&Zhang, L..(2011).Theoretical study of polarization-doped GaN-based light-emitting diodes.applied physics letters,98(10),101110. |
| MLA | Zhang, L.,et al."Theoretical study of polarization-doped GaN-based light-emitting diodes".applied physics letters 98.10(2011):101110. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。