Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer
文献类型：期刊论文
| ; | |
| 作者 | Ji, Panfeng; Liu, Naixin; Wei, Tongbo; Liu, Zhe; Lu, Hongxi; Wang, Junxi; Li, Jinmin; Ji, P.(jipanfeng@semi.ac.cn) |
| 刊名 | journal of semiconductors
 ; Journal of Semiconductors
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 32期号:11页码:114006 |
| 关键词 | Efficiency Electrostatic devices Electrostatic discharge Superlattices Voltage control Efficiency Electrostatic Devices Electrostatic Discharge Superlattices Voltage Control |
| ISSN号 | 16744926 ; 16744926 |
| 通讯作者 | ji, p.(jipanfeng@semi.ac.cn) |
| 英文摘要 | With an n-AlGaN(4 nm)/GaN(4 nm) superlattice(SL) inserted between an n-GaN and an InGaN/GaN multiquantum well active layer, the efficiency droop of GaN-based LEDs has been improved. When the injection current is lower than100 mA, the lumen efficiency of the LED with an n-AlGaN/GaN SL is relatively small compared to that without an n-AlGaN/GaN SL. However, as the injection current increases more than100 mA, the lumen efficiency of the LED with an n-AlGaN/GaN SL surpasses that of an LED without an n-AlGaN/GaN SL. The wall plug efficiency of an LED has the same trend as lumen efficiency. The improvement of the efficiency droop of LEDs with n-AlGaN/GaN SLs can be attributed to a decrease in electron leakage due to the enhanced current spreading ability and electron blocking effect at high current densities. The reverse current of LEDs at-5 V reverse voltage decreases from0.2568029 to0.0070543μA, and the electro-static discharge(ESD) pass yield of an LED at human body mode(HBM)-ESD impulses of2000 V increases from60% to90%.?2011 Chinese Institute of Electronics. |
| 学科主题 | 半导体材料 ; 半导体材料 |
| 收录类别 | EI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2012-06-14 ; 2012-06-14 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23144]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 通讯作者 | Ji, P.(jipanfeng@semi.ac.cn) |
| 推荐引用方式 GB/T 7714 | Ji, Panfeng,Liu, Naixin,Wei, Tongbo,et al. Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer, Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer[J]. journal of semiconductors, Journal of Semiconductors,2011, 2011,32, 32(11):114006, 114006. |
| APA | Ji, Panfeng.,Liu, Naixin.,Wei, Tongbo.,Liu, Zhe.,Lu, Hongxi.,...&Ji, P..(2011).Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer.journal of semiconductors,32(11),114006. |
| MLA | Ji, Panfeng,et al."Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer".journal of semiconductors 32.11(2011):114006. |
入库方式： OAI收割
来源：半导体研究所
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