Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer
文献类型：期刊论文
| ; | |
| 作者 | Li, Zhicong; Li, Panpan; Wang, Bing; Li, Hongjian; Liang, Meng; Yao, Ran; Li, Jing; Deng, Yuanming; Yi, Xiaoyan; Wang, Guohong |
| 刊名 | ieee international conference on group iv photonics gfp
 ; IEEE International Conference on Group IV Photonics GFP
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 32期号:11页码:114007 |
| 关键词 | Diodes Electrostatic devices Electrostatic discharge Gallium alloys Gallium nitride Light emission Diodes Electrostatic Devices Electrostatic Discharge Gallium Alloys Gallium Nitride Light Emission |
| ISSN号 | 16744926 ; 16744926 |
| 通讯作者 | li, z.(lizc@semi.ac.cn) |
| 英文摘要 | Through insertion of an AlGaN/GaN stack between the u-GaN and n-GaN of GaN-based light-emitting diodes(LEDs), the strain in the epilayer was increased, the dislocation density was reduced. GaN-based LEDs with different Al compositions were compared.6.8% Al composition in the stacks showed the highest electrostatic discharge(ESD) endurance ability at the human body mode up to6000 V and the pass yield exceeded95%.?2011 Chinese Institute of Electronics. |
| 学科主题 | 半导体材料 ; 半导体材料 |
| 收录类别 | EI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2012-06-14 ; 2012-06-14 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23145]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 通讯作者 | Li, Z.(lizc@semi.ac.cn) |
| 推荐引用方式 GB/T 7714 | Li, Zhicong,Li, Panpan,Wang, Bing,et al. Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer, Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer[J]. ieee international conference on group iv photonics gfp, IEEE International Conference on Group IV Photonics GFP,2011, 2011,32, 32(11):114007, 114007. |
| APA | Li, Zhicong.,Li, Panpan.,Wang, Bing.,Li, Hongjian.,Liang, Meng.,...&Li, Z..(2011).Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer.ieee international conference on group iv photonics gfp,32(11),114007. |
| MLA | Li, Zhicong,et al."Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer".ieee international conference on group iv photonics gfp 32.11(2011):114007. |
入库方式： OAI收割
来源：半导体研究所
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