Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy
文献类型：期刊论文
| ; | |
| 作者 | Hu, Qiang; Wei, Tongbo; Duan, Ruifei; Yang, Jiankun; Huo, Ziqiang; Zeng, Yiping; Xu, Shu; Hu, Q.(huqiang@semi.ac.cn) |
| 刊名 | materials science in semiconductor processing
 ; Materials Science in Semiconductor Processing
|
| 出版日期 | 2011 ; 2011 |
| ISSN号 | 13698001 ; 13698001 |
| 关键词 | Carrier concentration Etching Gallium alloys Optical properties Point defects Raman spectroscopy Semiconducting gallium compounds Vapor phase epitaxy Vapors Carrier Concentration Etching Gallium Alloys Optical Properties Point Defects Raman Spectroscopy Semiconducting Gallium Compounds Vapor Phase Epitaxy Vapors |
| 通讯作者 | hu, q.(huqiang@semi.ac.cn) |
| 英文摘要 | GaN freestanding substrate was obtained by hydride vapor phase epitaxy directly on sapphire with porous network interlayer. The morphologies of Ga-face and N-face of freestanding GaN substrate were analyzed by a variety of characterization techniques before and after etching in boiled KOH for1 min. The obtained characteristics of unetched GaN are strongly dependent on the growth polarity. The N-polar GaN layer has high free electron, impurity and point defect concentrations. In the layers grown on the(0001) Ga-polar side, these concentrations are very low. After etching, the Ga-polar GaN has identical properties to those of the unetched Ga-polar GaN layer. But the etched N-polar GaN has significant difference with unetched N-polar GaN layer in structure and optical properties. The etched N-polar GaN has a smaller(0002) DCXRD width(646″) than the unetched N-polar GaN(1351″). The optical quality of etched N-polar GaN is comparable with that of Ga-polar GaN, and the FWHMs of the D0X line of Ga-face and etched N-face are9.3 and12.8 meV, respectively. The LPP mode in the Raman spectra and FERB peak in PL spectra were used to analyze the free carrier concentration of two sides of etched and unetched freestanding GaN substrate.?2011 Elsevier Ltd. All rights reserved. |
| 学科主题 | 半导体材料 ; 半导体材料 |
| 收录类别 | EI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2012-06-14 ; 2012-06-14 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23146]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 通讯作者 | Hu, Q.(huqiang@semi.ac.cn) |
| 推荐引用方式 GB/T 7714 | Hu, Qiang,Wei, Tongbo,Duan, Ruifei,et al. Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy, Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy[J]. materials science in semiconductor processing, Materials Science in Semiconductor Processing,2011, 2011. |
| APA | Hu, Qiang.,Wei, Tongbo.,Duan, Ruifei.,Yang, Jiankun.,Huo, Ziqiang.,...&Hu, Q..(2011).Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy.materials science in semiconductor processing. |
| MLA | Hu, Qiang,et al."Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy".materials science in semiconductor processing (2011). |
入库方式： OAI收割
来源：半导体研究所
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