Optical and electrical characteristics of GaN vertical light emitting diode with current block layer
文献类型：期刊论文
| ; | |
| 作者 | Guo, Enqing; Liu, Zhiqiang; Wang, Liancheng; Yi, Xiaoyan; Wang, Guohong; Guo, E.(guoeq@semi.ac.cn) |
| 刊名 | journal of semiconductors
 ; Journal of Semiconductors
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 32期号:6页码:64007 |
| 关键词 | Drops Efficiency Electric contactors Gallium nitride Light emission Ohmic contacts Silica Drops Efficiency Electric Contactors Gallium Nitride Light Emission Ohmic Contacts Silica |
| ISSN号 | 16744926 ; 16744926 |
| 通讯作者 | guo, e.(guoeq@semi.ac.cn) |
| 英文摘要 | A GaN vertical light emitting diode(LED) with a current block layer(CBL) was investigated. Vertical LEDs without a CBL, with a non-ohmic contact CBL and with a silicon dioxide CBL were fabricated. Optical and electrical tests were carried out. The results show that the light output power of vertical LEDs with a non-ohmic contact CBL and with a silicon dioxide CBL are40.6% and60.7% higher than that of vertical LEDs without a CBL at350 mA, respectively. The efficiencies of vertical LEDs without a CBL, with a non-ohmic contact CBL and with a silicon dioxide CBL drop to72%,78% and85.5% of their maximum efficiency at350 mA, respectively. Moreover, vertical LEDs with a non-ohmic contact CBL have relatively superior anti-electrostatic ability.?2011 Chinese Institute of Electronics. |
| 学科主题 | 半导体材料 ; 半导体材料 |
| 收录类别 | EI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2012-06-14 ; 2012-06-14 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23147]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 通讯作者 | Guo, E.(guoeq@semi.ac.cn) |
| 推荐引用方式 GB/T 7714 | Guo, Enqing,Liu, Zhiqiang,Wang, Liancheng,et al. Optical and electrical characteristics of GaN vertical light emitting diode with current block layer, Optical and electrical characteristics of GaN vertical light emitting diode with current block layer[J]. journal of semiconductors, Journal of Semiconductors,2011, 2011,32, 32(6):64007, 64007. |
| APA | Guo, Enqing,Liu, Zhiqiang,Wang, Liancheng,Yi, Xiaoyan,Wang, Guohong,&Guo, E..(2011).Optical and electrical characteristics of GaN vertical light emitting diode with current block layer.journal of semiconductors,32(6),64007. |
| MLA | Guo, Enqing,et al."Optical and electrical characteristics of GaN vertical light emitting diode with current block layer".journal of semiconductors 32.6(2011):64007. |
入库方式： OAI收割
来源：半导体研究所
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