Influence of growth conditions on the V-defects in InGaN/GaN MQWs
文献类型：期刊论文
| ; | |
| 作者 | Ji, Panfeng; Liu, Naixin; Wei, Xuecheng; Liu, Zhe; Lu, Hongxi; Wang, Junxi; Li, Jinmin; Ji, P.(jipanfeng@semi.ac.cn) |
| 刊名 | journal of semiconductors
 ; Journal of Semiconductors
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 32期号:10页码:103001 |
| 关键词 | Gallium nitride Growth temperature Semiconductor quantum wells Surface defects Gallium Nitride Growth Temperature Semiconductor Quantum Wells Surface Defects |
| ISSN号 | 16744926 ; 16744926 |
| 通讯作者 | ji, p.(jipanfeng@semi.ac.cn) |
| 英文摘要 | The influence of the growth temperature, TMIn/TEGa and V/III ratio on the V-defects of InGaN/GaN multi-quantum wells(MQWs) has been investigated and discussed. When the TMIn flow increases from180 to200 sccm, the density of V-defects increases from2.72×1018 to5.24×1018 cm-2, and the V-defect width and depth increase too. The density also increases with the growth temperature. The densities are2.05×108,2.72×1018 and4.23×108 cm-2, corresponding to a growth temperature of748,753 and758°C respectively. When the NH3 flows are5000,6600 and8000 sccm, the densities of the V-defects of these samples are6.34×1018,2.72×1018 and4.13×1018 cm-2, respectively. A proper V/III ratio is needed to achieve step flow growth mode. We get the best quality of InGaN/GaN MQWs at a growth temperature of753°C TMIn flow at180 sccm, NH3 flow at6600 sccm, a flatter surface and less V-defects density. The depths of these V-defects are from10 to30 nm, and the widths are from100 to200 nm. In order to suppress the influence of V-defects on reverse current and electro-static discharge of LEDs, it is essential to grow thicker p-GaN to fill the V-defects.?2011 Chinese Institute of Electronics. |
| 学科主题 | 半导体材料 ; 半导体材料 |
| 收录类别 | EI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2012-06-14 ; 2012-06-14 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23148]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 通讯作者 | Ji, P.(jipanfeng@semi.ac.cn) |
| 推荐引用方式 GB/T 7714 | Ji, Panfeng,Liu, Naixin,Wei, Xuecheng,et al. Influence of growth conditions on the V-defects in InGaN/GaN MQWs, Influence of growth conditions on the V-defects in InGaN/GaN MQWs[J]. journal of semiconductors, Journal of Semiconductors,2011, 2011,32, 32(10):103001, 103001. |
| APA | Ji, Panfeng.,Liu, Naixin.,Wei, Xuecheng.,Liu, Zhe.,Lu, Hongxi.,...&Ji, P..(2011).Influence of growth conditions on the V-defects in InGaN/GaN MQWs.journal of semiconductors,32(10),103001. |
| MLA | Ji, Panfeng,et al."Influence of growth conditions on the V-defects in InGaN/GaN MQWs".journal of semiconductors 32.10(2011):103001. |
入库方式： OAI收割
来源：半导体研究所
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