High power885 nm laser diodes with graded optical expand structures for small divergence angle
文献类型:期刊论文
作者 | Wang, Jun ; Bai, Yiming ; Liu, Yuanyuan ; He, Weili ; Xiong, Cong ; Wang, Cuiluan ; Feng, Xiaoming ; Zhong, Li ; Liu, Suping ; Ma, Xiaoyu |
刊名 | hongwai yu jiguang gongcheng/infrared and laser engineering
![]() |
出版日期 | 2011 |
卷号 | 40期号:12页码:2382-2387 |
关键词 | Energy efficiency Epitaxial growth High power lasers Optimization Pumping(laser) Quantum well lasers Semiconductor quantum wells |
ISSN号 | 10072276 |
通讯作者 | wang, j.(wangjun@semi.ac.cn) |
学科主题 | 半导体器件 |
收录类别 | EI |
语种 | 中文 |
公开日期 | 2012-06-14 |
源URL | [http://ir.semi.ac.cn/handle/172111/23099] ![]() |
专题 | 半导体研究所_光电子器件国家工程中心 |
推荐引用方式 GB/T 7714 | Wang, Jun,Bai, Yiming,Liu, Yuanyuan,et al. High power885 nm laser diodes with graded optical expand structures for small divergence angle[J]. hongwai yu jiguang gongcheng/infrared and laser engineering,2011,40(12):2382-2387. |
APA | Wang, Jun.,Bai, Yiming.,Liu, Yuanyuan.,He, Weili.,Xiong, Cong.,...&Ma, Xiaoyu.(2011).High power885 nm laser diodes with graded optical expand structures for small divergence angle.hongwai yu jiguang gongcheng/infrared and laser engineering,40(12),2382-2387. |
MLA | Wang, Jun,et al."High power885 nm laser diodes with graded optical expand structures for small divergence angle".hongwai yu jiguang gongcheng/infrared and laser engineering 40.12(2011):2382-2387. |
入库方式: OAI收割
来源:半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。