Thermal characteristic of GaAs-based laser diodes
文献类型：期刊论文
| 作者 | Qiao, Yanbin ; Feng, Shiwei ; Ma, Xiaoyu ; Wang, Xiaowei ; Guo, Chunsheng ; Deng, Haitao ; Zhang, Guangchen |
| 刊名 | hongwai yu jiguang gongcheng/infrared and laser engineering
 |
| 出版日期 | 2011 |
| 卷号 | 40期号:11页码:2134-2137 |
| 关键词 | Degradation Diodes Electric properties Gallium arsenide Hybrid materials Optical properties Semiconducting gallium Semiconductor diodes Testing Thermodynamic properties |
| ISSN号 | 10072276 |
| 通讯作者 | qiao, y.(ybqiao@emails.bjut.edu.cn) |
| 学科主题 | 半导体器件 |
| 收录类别 | EI |
| 语种 | 中文 |
| 公开日期 | 2012-06-14 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23100]  |
| 专题 | 半导体研究所_光电子器件国家工程中心 |
| 推荐引用方式 GB/T 7714 | Qiao, Yanbin,Feng, Shiwei,Ma, Xiaoyu,et al. Thermal characteristic of GaAs-based laser diodes[J]. hongwai yu jiguang gongcheng/infrared and laser engineering,2011,40(11):2134-2137. |
| APA | Qiao, Yanbin.,Feng, Shiwei.,Ma, Xiaoyu.,Wang, Xiaowei.,Guo, Chunsheng.,...&Zhang, Guangchen.(2011).Thermal characteristic of GaAs-based laser diodes.hongwai yu jiguang gongcheng/infrared and laser engineering,40(11),2134-2137. |
| MLA | Qiao, Yanbin,et al."Thermal characteristic of GaAs-based laser diodes".hongwai yu jiguang gongcheng/infrared and laser engineering 40.11(2011):2134-2137. |
入库方式： OAI收割
来源：半导体研究所
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