Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers
文献类型：期刊论文
| ; | |
| 作者 | Zhang, Yu; Wang, Guowei; Tang, Bao; Xu, Yingqiang; Xu, Yun; Song, Guofeng; Xu, Y.(xuyun@semi.ac.cn) |
| 刊名 | journal of semiconductors
 ; Journal of Semiconductors
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 32期号:10页码:103002 |
| 关键词 | Buffer layers Epitaxial growth Gallium alloys Indium antimonides Molecular beam epitaxy Molecular beams Optical waveguides Optimization Semiconducting gallium arsenide Semiconductor quantum wells Tellurium Tellurium compounds Buffer Layers Epitaxial Growth Gallium Alloys Indium Antimonides Molecular Beam Epitaxy Molecular Beams Optical Waveguides Optimization Semiconducting Gallium Arsenide Semiconductor Quantum Wells Tellurium Tellurium Compounds |
| ISSN号 | 16744926 ; 16744926 |
| 通讯作者 | xu, y.(xuyun@semi.ac.cn) |
| 英文摘要 | 2μm InGaSb/AlGaAsSb strained quantum wells and a tellurium-doped GaSb buffer layer were grown by molecular beam epitaxy(MBE). The growth parameters of strained quantum wells were optimized by AFM, XRD and PL at77 K. The optimal growth temperature of quantum wells is440°C. The PL peak wavelength of quantum wells at300 K is1.98μm, and the FWHM is115 nm. Tellurium-doped GaSb buffer layers were optimized by Hall measurement. The optimal doping concentration is1.127×1018 cm-3 and the resistivity is5.295×10-3Ωcm.?2011 Chinese Institute of Electronics. |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | EI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2012-06-14 ; 2012-06-14 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23089]  |
| 专题 | 半导体研究所_光电系统实验室 |
| 通讯作者 | Xu, Y.(xuyun@semi.ac.cn) |
| 推荐引用方式 GB/T 7714 | Zhang, Yu,Wang, Guowei,Tang, Bao,et al. Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers, Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers[J]. journal of semiconductors, Journal of Semiconductors,2011, 2011,32, 32(10):103002, 103002. |
| APA | Zhang, Yu.,Wang, Guowei.,Tang, Bao.,Xu, Yingqiang.,Xu, Yun.,...&Xu, Y..(2011).Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers.journal of semiconductors,32(10),103002. |
| MLA | Zhang, Yu,et al."Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers".journal of semiconductors 32.10(2011):103002. |
入库方式： OAI收割
来源：半导体研究所
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