Fabrication of246 nm back-illuminated AlGaN solar-blind ultraviolet p-i-n photodetector
文献类型：期刊论文
| ; | |
| 作者 | Yan, Tingjing; Chong, Ming; Zhao, Degang; Zhang, Shuang; Chen, Lianghui; Yan, T.(tingjing.yan@gmail.com) |
| 刊名 | hongwai yu jiguang gongcheng/infrared and laser engineering
 ; Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 40期号:1页码:32-35 |
| 关键词 | Alloying Fabrication Gallium Heterojunctions Optoelectronic devices Pixels Alloying Fabrication Gallium Heterojunctions Optoelectronic Devices Pixels |
| ISSN号 | 10072276 ; 10072276 |
| 通讯作者 | yan, t.(tingjing.yan@gmail.com) |
| 英文摘要 | A short wavelength back-illuminated AlGaN solar-blind ultraviolet p-i-n photodetector was designed and fabricated. It was photosensitive in the waveband225-255 nm, and the peak wavelength was246 nm. A back-illuminated p-i-n heterojunction structure was grown on transparent sapphire substrate using MOCVD, the AlxGa1-xN alloy composition of the n-type window layer was71%, and the alloy composition of the unintentionally doped(UID) absorber layer was52%. The dark current measured at zero bias was27 pA, and the photocurrent was2.7 nA, while the peak responsivity was23 mA/W. A128×128 pixels solar blind ultraviolet photodetector array was fabricated on this basis. The diameter of each pixel was44μm with a50μm pitch. |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | EI |
| 语种 | 中文 ; 中文 |
| 公开日期 | 2012-06-14 ; 2012-06-14 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23090]  |
| 专题 | 半导体研究所_光电系统实验室 |
| 通讯作者 | Yan, T.(tingjing.yan@gmail.com) |
| 推荐引用方式 GB/T 7714 | Yan, Tingjing,Chong, Ming,Zhao, Degang,et al. Fabrication of246 nm back-illuminated AlGaN solar-blind ultraviolet p-i-n photodetector, Fabrication of246 nm back-illuminated AlGaN solar-blind ultraviolet p-i-n photodetector[J]. hongwai yu jiguang gongcheng/infrared and laser engineering, Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering,2011, 2011,40, 40(1):32-35, 32-35. |
| APA | Yan, Tingjing,Chong, Ming,Zhao, Degang,Zhang, Shuang,Chen, Lianghui,&Yan, T..(2011).Fabrication of246 nm back-illuminated AlGaN solar-blind ultraviolet p-i-n photodetector.hongwai yu jiguang gongcheng/infrared and laser engineering,40(1),32-35. |
| MLA | Yan, Tingjing,et al."Fabrication of246 nm back-illuminated AlGaN solar-blind ultraviolet p-i-n photodetector".hongwai yu jiguang gongcheng/infrared and laser engineering 40.1(2011):32-35. |
入库方式： OAI收割
来源：半导体研究所
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