Photon detection and emission of epitaxial Ge on Si with potential applications in microwave photonic filters
文献类型:期刊论文
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作者 | Ding, L.; Lim, Andy Eu-Jin; Fang, Qing; Liow, Tsung-Yang; Yu, M.B.; Lo, G.-Q.; Ding, L.(dingl@ime.a-star.edu.sg) |
刊名 | 2011 ieee international topical meeting on microwave photonics- jointly held with the2011 asia-pacific microwave photonics conference, mwp/apmp2011
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出版日期 | 2011 ; 2011 |
页码 | 101-104 |
关键词 | Detectors Electroluminescence Epitaxial growth Germanium Light Light emission Light sources Microwave filters Microwaves Monolithic integrated circuits Optical frequency conversion Photodetectors Photoluminescence Photonics Photons Semiconducting silicon compounds Silicon Detectors Electroluminescence Epitaxial Growth Germanium Light Light Emission Light Sources Microwave Filters Microwaves Monolithic Integrated Circuits Optical Frequency Conversion Photodetectors Photoluminescence Photonics Photons Semiconducting Silicon Compounds Silicon |
通讯作者 | ding, l.(dingl@ime.a-star.edu.sg) |
英文摘要 | Microwave photonic filter requires high-speed Radio frequency(RF)-optical and optical-RF signal conversion. Light sources and photo-detectors(PDs) are indispensible for such conversions. Monolithic integration of functions of photon emission and detection is demonstrated using epitaxial Ge on Si. The fabricated waveguided PD shows a high bandwidth of10 GHz with the responsivity of0.8 A/W and dark current of150 nA at-1V. The photoluminescence(PL) properties of P-implanted Ge are studied, and an improved annealing process is demonstrated to enhance the light emission by1 order. Electroluminescence(EL) is obtained from the waveguided n+-Ge light-emitting diode(LED), and the emitted power has been studied as a function of injected current. The successful demonstration of both waveguided PD and LED on single Si chip would be attractive for fabricating a compact size microwave photonic filter with low cost and high integrity.?2011 IEEE. |
学科主题 | 光电子学 ; 光电子学 |
收录类别 | EI |
公开日期 | 2012-06-14 ; 2012-06-14 |
源URL | [http://ir.semi.ac.cn/handle/172111/23092] ![]() |
专题 | 半导体研究所_光电系统实验室 |
通讯作者 | Ding, L.(dingl@ime.a-star.edu.sg) |
推荐引用方式 GB/T 7714 | Ding, L.,Lim, Andy Eu-Jin,Fang, Qing,et al. Photon detection and emission of epitaxial Ge on Si with potential applications in microwave photonic filters, Photon detection and emission of epitaxial Ge on Si with potential applications in microwave photonic filters[J]. 2011 ieee international topical meeting on microwave photonics- jointly held with the2011 asia-pacific microwave photonics conference, mwp/apmp2011, 2011 IEEE International Topical Meeting on Microwave Photonics- Jointly Held with the2011 Asia-Pacific Microwave Photonics Conference, MWP/APMP2011,2011, 2011:101-104, 101-104. |
APA | Ding, L..,Lim, Andy Eu-Jin.,Fang, Qing.,Liow, Tsung-Yang.,Yu, M.B..,...&Ding, L..(2011).Photon detection and emission of epitaxial Ge on Si with potential applications in microwave photonic filters.2011 ieee international topical meeting on microwave photonics- jointly held with the2011 asia-pacific microwave photonics conference, mwp/apmp2011,101-104. |
MLA | Ding, L.,et al."Photon detection and emission of epitaxial Ge on Si with potential applications in microwave photonic filters".2011 ieee international topical meeting on microwave photonics- jointly held with the2011 asia-pacific microwave photonics conference, mwp/apmp2011 (2011):101-104. |
入库方式: OAI收割
来源:半导体研究所
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