High efficiency continuous-wave single-frequency Nd:YVO4 ring laser under diode pumping at880 nm
文献类型:期刊论文
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作者 | Li, M.; Zhao, W.; Hou, W.; Zhang, S.; Guo, L.; Lin, X.; Li, J.; Li, M.(mlli@semi.ac.cn) |
刊名 | applied physics b: lasers and optics
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出版日期 | 2011 ; 2011 |
页码 | 1-5 |
关键词 | Efficiency Mirrors Neodymium Ring lasers Efficiency Mirrors Neodymium Ring Lasers |
ISSN号 | 09462171 ; 09462171 |
通讯作者 | li, m.(mlli@semi.ac.cn) |
英文摘要 | An efficient single-frequency continuous-wave Nd:YVO4 ring laser pumped at880 nm is presented. With compact four-mirror ring cavity and optical isolator, we obtained an output power of14.56 W at1064 nm, corresponding to a slope efficiency of61.7% and an optical-to-optical efficiency of58.4% with respect to the absorbed pump power. The stability of the output power was better than±0.5% over two hours. At the same time, a beam quality factor of M2≈1.2 was measured and the line width of the longitudinal mode was about25 MHz. To the best of our knowledge, this is the highest slope efficiency and optical-to-optical efficiency in single-frequency Nd:YVO4 ring laser.?2011 Springer-Verlag. |
学科主题 | 半导体器件 ; 半导体器件 |
收录类别 | EI |
公开日期 | 2012-06-14 ; 2012-06-14 |
源URL | [http://ir.semi.ac.cn/handle/172111/23110] ![]() |
专题 | 半导体研究所_全固态光源实验室 |
通讯作者 | Li, M.(mlli@semi.ac.cn) |
推荐引用方式 GB/T 7714 | Li, M.,Zhao, W.,Hou, W.,et al. High efficiency continuous-wave single-frequency Nd:YVO4 ring laser under diode pumping at880 nm, High efficiency continuous-wave single-frequency Nd:YVO4 ring laser under diode pumping at880 nm[J]. applied physics b: lasers and optics, Applied Physics B: Lasers and Optics,2011, 2011:1-5, 1-5. |
APA | Li, M..,Zhao, W..,Hou, W..,Zhang, S..,Guo, L..,...&Li, M..(2011).High efficiency continuous-wave single-frequency Nd:YVO4 ring laser under diode pumping at880 nm.applied physics b: lasers and optics,1-5. |
MLA | Li, M.,et al."High efficiency continuous-wave single-frequency Nd:YVO4 ring laser under diode pumping at880 nm".applied physics b: lasers and optics (2011):1-5. |
入库方式: OAI收割
来源:半导体研究所
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