High-quality homoepitaxial layers grown on4H-SiC at a high growth rate by vertical LPCVD
文献类型：期刊论文
| 作者 | Wu, Hailei ; Sun, Guosheng ; Yang, Ting ; Yan, Guoguo ; Wang, Lei ; Zhao, Wanshun ; Liu, Xingfang ; Zeng, Yiping ; Wen, Jialiang |
| 刊名 | journal of semiconductors
 |
| 出版日期 | 2011 |
| 卷号 | 32期号:4页码:43005 |
| ISSN号 | 16744926 |
| 关键词 | Epitaxial growth Ethylene Growth rate Morphology Surface roughness |
| 通讯作者 | wu, h.(hlwu@semi.ac.cn) |
| 学科主题 | 半导体材料 |
| 收录类别 | EI |
| 语种 | 英语 |
| 公开日期 | 2012-06-14 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23039]  |
| 专题 | 半导体研究所_半导体材料科学中心 |
| 推荐引用方式 GB/T 7714 | Wu, Hailei,Sun, Guosheng,Yang, Ting,et al. High-quality homoepitaxial layers grown on4H-SiC at a high growth rate by vertical LPCVD[J]. journal of semiconductors,2011,32(4):43005. |
| APA | Wu, Hailei.,Sun, Guosheng.,Yang, Ting.,Yan, Guoguo.,Wang, Lei.,...&Wen, Jialiang.(2011).High-quality homoepitaxial layers grown on4H-SiC at a high growth rate by vertical LPCVD.journal of semiconductors,32(4),43005. |
| MLA | Wu, Hailei,et al."High-quality homoepitaxial layers grown on4H-SiC at a high growth rate by vertical LPCVD".journal of semiconductors 32.4(2011):43005. |
入库方式： OAI收割
来源：半导体研究所
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