The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure
文献类型：期刊论文
| 作者 | Bi, Yang ; Wang, XiaoLiang ; Yang, CuiBai ; Xiao, HongLing ; Wang, CuiMei ; Peng, EnChao ; Lin, DeFeng ; Feng, Chun ; Jiang, LiJuan, |
| 刊名 | applied physics a: materials science and processing
 |
| 出版日期 | 2011 |
| 卷号 | 104期号:4页码:1211-1216 |
| 关键词 | Poisson equation |
| ISSN号 | 09478396 |
| 通讯作者 | bi, y.(ybi@semi.ac.cn) |
| 学科主题 | 半导体材料 |
| 收录类别 | EI |
| 语种 | 英语 |
| 公开日期 | 2012-06-14 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23040]  |
| 专题 | 半导体研究所_半导体材料科学中心 |
| 推荐引用方式 GB/T 7714 | Bi, Yang,Wang, XiaoLiang,Yang, CuiBai,et al. The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure[J]. applied physics a: materials science and processing,2011,104(4):1211-1216. |
| APA | Bi, Yang.,Wang, XiaoLiang.,Yang, CuiBai.,Xiao, HongLing.,Wang, CuiMei.,...&Jiang, LiJuan,.(2011).The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure.applied physics a: materials science and processing,104(4),1211-1216. |
| MLA | Bi, Yang,et al."The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure".applied physics a: materials science and processing 104.4(2011):1211-1216. |
入库方式： OAI收割
来源：半导体研究所
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