Structures and optical characteristics of InGaN quantum dots grown by MBE
文献类型：期刊论文
| 作者 | Wang, Baozhu ; Yan, Cuiying ; Wang, Xiaoliang |
| 刊名 | xiyou jinshu cailiao yu gongcheng/rare metal materials and engineering
 |
| 出版日期 | 2011 |
| 卷号 | 40期号:11页码:2030-2032 |
| 关键词 | Atomic force microscopy Gallium nitride Molecular beam epitaxy Optical materials Optical properties Reflection high energy electron diffraction Sapphire |
| ISSN号 | 1002185x |
| 通讯作者 | wang, b.(wangbz@semi.ac.cn) |
| 学科主题 | 半导体材料 |
| 收录类别 | EI |
| 语种 | 中文 |
| 公开日期 | 2012-06-14 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23043]  |
| 专题 | 半导体研究所_半导体材料科学中心 |
| 推荐引用方式 GB/T 7714 | Wang, Baozhu,Yan, Cuiying,Wang, Xiaoliang. Structures and optical characteristics of InGaN quantum dots grown by MBE[J]. xiyou jinshu cailiao yu gongcheng/rare metal materials and engineering,2011,40(11):2030-2032. |
| APA | Wang, Baozhu,Yan, Cuiying,&Wang, Xiaoliang.(2011).Structures and optical characteristics of InGaN quantum dots grown by MBE.xiyou jinshu cailiao yu gongcheng/rare metal materials and engineering,40(11),2030-2032. |
| MLA | Wang, Baozhu,et al."Structures and optical characteristics of InGaN quantum dots grown by MBE".xiyou jinshu cailiao yu gongcheng/rare metal materials and engineering 40.11(2011):2030-2032. |
入库方式： OAI收割
来源：半导体研究所
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