中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Influence of window layer thickness on double layer antireflection coating for triple junction solar cells

文献类型:期刊论文

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作者Wang, Lijuan; Zhan, Feng; Yu, Ying; Zhu, Yan; Liu, Shaoqing; Huang, Shesong; Ni, Haiqiao; Niu, Zhichuan; Wang, L.(ljwang09@semi.ac.cn)
刊名journal of semiconductors ; Journal of Semiconductors
出版日期2011 ; 2011
卷号32期号:6页码:66001
关键词Antireflection coatings Coatings Gallium Optimization Silicon compounds Titanium dioxide Transfer matrix method Zinc sulfide Antireflection Coatings Coatings Gallium Optimization Silicon Compounds Titanium Dioxide Transfer Matrix Method Zinc Sulfide
ISSN号16744926 ; 16744926
通讯作者wang, l.(ljwang09@semi.ac.cn)
英文摘要The optimization of a SiO2/TiO2, SiO2/ZnS double layer antireflection coating(ARC) on Ga0.5In0.5P/In0.02Ga0.98As/Ge solar cells for terrestrial application is discussed. The Al0.5In0.5P window layer thickness is also taken into consideration. It is shown that the optimal parameters of double layer ARC vary with the thickness of the window layer.?2011 Chinese Institute of Electronics.
学科主题半导体物理 ; 半导体物理
收录类别EI
语种英语 ; 英语
公开日期2012-06-14 ; 2012-06-14
源URL[http://ir.semi.ac.cn/handle/172111/23047]  
专题半导体研究所_半导体超晶格国家重点实验室
通讯作者Wang, L.(ljwang09@semi.ac.cn)
推荐引用方式
GB/T 7714
Wang, Lijuan,Zhan, Feng,Yu, Ying,et al. Influence of window layer thickness on double layer antireflection coating for triple junction solar cells, Influence of window layer thickness on double layer antireflection coating for triple junction solar cells[J]. journal of semiconductors, Journal of Semiconductors,2011, 2011,32, 32(6):66001, 66001.
APA Wang, Lijuan.,Zhan, Feng.,Yu, Ying.,Zhu, Yan.,Liu, Shaoqing.,...&Wang, L..(2011).Influence of window layer thickness on double layer antireflection coating for triple junction solar cells.journal of semiconductors,32(6),66001.
MLA Wang, Lijuan,et al."Influence of window layer thickness on double layer antireflection coating for triple junction solar cells".journal of semiconductors 32.6(2011):66001.

入库方式: OAI收割

来源:半导体研究所

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