2-5m InAs/GaSb superlattices infrared photodetector
文献类型：期刊论文
| ; | |
| 作者 | Xu, Yingqiang; Tang, Bao; Wang, Guowei; Ren, Zhengwei; Niu, Zhichuan; Xu, Y.(yingqxu@semi.ac.cn) |
| 刊名 | hongwai yu jiguang gongcheng/infrared and laser engineering
 ; Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 40期号:8页码:1403-1406 |
| 关键词 | Alignment Atomic force microscopy Atomic spectroscopy Detectors Epitaxial growth Gallium alloys Gallium arsenide Indium arsenide Infrared detectors Molecular beam epitaxy Molecular beams Optoelectronic devices Semiconducting gallium Superlattices Transmission electron microscopy X ray diffraction Alignment Atomic Force Microscopy Atomic Spectroscopy Detectors Epitaxial Growth Gallium Alloys Gallium Arsenide Indium Arsenide Infrared Detectors Molecular Beam Epitaxy Molecular Beams Optoelectronic Devices Semiconducting Gallium Superlattices Transmission Electron Microscopy x Ray Diffraction |
| ISSN号 | 10072276 ; 10072276 |
| 通讯作者 | xu, y.(yingqxu@semi.ac.cn) |
| 英文摘要 | High quality InAs/GaSb type-II band alignment superlattices infrared photodetectors with different InAs thicknesses were grown on GaSb and GaAs substrates by molecular beam epitaxy(MBE). The detection wavelengths of these InAs/GaSb SLs infrared detectors were2-5μm. The material and optical qualities of InAs/GaSb superlattices on different substrates by MBE were characterized by different measurement methods, including high resolution transmission electron microscope(HRTEM), atomic force microscope(AFM), X-ray diffraction(XRD), low temperature(LT) and room temperature(RT) photo response spectrum and LT and RT photoluminescence(PL) spectrum. Then2-5μm GaAs and GaSb based infrared photodetectors were fabricated by these InAs/GaSb type-II band alignment superlattices materials. The detectivity of the2μm GaAs based InAs/GaSb SLs photodetector is4×109 cm· Hz1/2/W at77K and that of the5μm GaSb based InAs/GaSb SLs photodetector is1.6×1010 cm· Hz1/2/W at the same temperature. |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | EI |
| 语种 | 中文 ; 中文 |
| 公开日期 | 2012-06-14 ; 2012-06-14 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23051]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 通讯作者 | Xu, Y.(yingqxu@semi.ac.cn) |
| 推荐引用方式 GB/T 7714 | Xu, Yingqiang,Tang, Bao,Wang, Guowei,et al. 2-5m InAs/GaSb superlattices infrared photodetector, 2-5m InAs/GaSb superlattices infrared photodetector[J]. hongwai yu jiguang gongcheng/infrared and laser engineering, Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering,2011, 2011,40, 40(8):1403-1406, 1403-1406. |
| APA | Xu, Yingqiang,Tang, Bao,Wang, Guowei,Ren, Zhengwei,Niu, Zhichuan,&Xu, Y..(2011).2-5m InAs/GaSb superlattices infrared photodetector.hongwai yu jiguang gongcheng/infrared and laser engineering,40(8),1403-1406. |
| MLA | Xu, Yingqiang,et al."2-5m InAs/GaSb superlattices infrared photodetector".hongwai yu jiguang gongcheng/infrared and laser engineering 40.8(2011):1403-1406. |
入库方式： OAI收割
来源：半导体研究所
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