Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy
文献类型：期刊论文
| ; | |
| 作者 | Zhu, Yan; Ni, Hai-qiao; Wang, Hai-li; He, Ji-fang; Li, Mi-feng; Shang, Xiang-jun; Niu, Zhi-chuan; Zhu, Y.(ttcow@126.com) |
| 刊名 | optoelectronics letters
 ; Optoelectronics Letters
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 7期号:5页码:325-329 |
| 关键词 | Epitaxial growth Gallium arsenide Growth(materials) Molecular beam epitaxy Semiconducting gallium Semiconducting indium Semiconductor quantum wells Epitaxial Growth Gallium Arsenide Growth(Materials) Molecular Beam Epitaxy Semiconducting Gallium Semiconducting Indium Semiconductor Quantum Wells |
| ISSN号 | 16731905 ; 16731905 |
| 通讯作者 | zhu, y.(ttcow@126.com) |
| 英文摘要 | The GaAs based InGaAs metamorphic structures and their growth by molecular beam epitaxy(MBE) are investigated. The controlling of the source temperature is improved to realize the linearly graded InGaAs metamorphic structure precisely. The threading dislocations are reduced. We also optimize the growth and annealing parameters of the InGaAs quantum well(QW). The1.3-μm GaAs based metamorphic InGaAs QW is completed. A1.3-μm GaAs based metamorphic laser is reported.?2011 Tianjin University of Technology and Springer-Verlag Berlin Heidelberg. |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | EI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2012-06-14 ; 2012-06-14 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23052]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 通讯作者 | Zhu, Y.(ttcow@126.com) |
| 推荐引用方式 GB/T 7714 | Zhu, Yan,Ni, Hai-qiao,Wang, Hai-li,et al. Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy, Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy[J]. optoelectronics letters, Optoelectronics Letters,2011, 2011,7, 7(5):325-329, 325-329. |
| APA | Zhu, Yan.,Ni, Hai-qiao.,Wang, Hai-li.,He, Ji-fang.,Li, Mi-feng.,...&Zhu, Y..(2011).Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy.optoelectronics letters,7(5),325-329. |
| MLA | Zhu, Yan,et al."Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy".optoelectronics letters 7.5(2011):325-329. |
入库方式： OAI收割
来源：半导体研究所
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