Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation
文献类型：期刊论文
| ; | |
| 作者 | Zhang, Renping; Yan, Wei; Wang, Xiaoliang; Yang, Fuhua; Zhang, R.(zhangrenping@semi.ac.cn) |
| 刊名 | journal of semiconductors
 ; Journal of Semiconductors
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 32期号:6页码:64001 |
| ISSN号 | 16744926 ; 16744926 |
| 关键词 | Aspect ratio Current density Drain current Electric network analysis Electric network analyzers Electron mobility Fabrication Gallium nitride Ohmic contacts Passivation Silicon nitride Silicon wafers Aspect Ratio Current Density Drain Current Electric Network Analysis Electric Network Analyzers Electron Mobility Fabrication Gallium Nitride Ohmic Contacts Passivation Silicon Nitride Silicon Wafers |
| 通讯作者 | zhang, r.(zhangrenping@semi.ac.cn) |
| 英文摘要 | AlGaN/GaN high electron mobility transistors(HEMTs) with high performance were fabricated and characterized. A variety of techniques were used to improve device performance, such as AlN interlayer, silicon nitride passivation, high aspect ratio T-shaped gate, low resistance ohmic contact and short drain- source distance. DC and RF performances of as-fabricated HEMTs were characterized by utilizing a semiconductor characterization system and a vector network analyzer, respectively. As-fabricated devices exhibited a maximum drain current density of1.41 A/mm and a maximum peak extrinsic transconductance of317 mS/mm. The obtained current density is larger than those reported in the literature to date, implemented with a domestic wafer and processes. Furthermore, a unity current gain cut-off frequency of74.3 GHz and a maximum oscillation frequency of112.4 GHz were obtained on a device with an80 nm gate length.?2011 Chinese Institute of Electronics. |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | EI |
| 公开日期 | 2012-06-14 ; 2012-06-14 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23057]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 通讯作者 | Zhang, R.(zhangrenping@semi.ac.cn) |
| 推荐引用方式 GB/T 7714 | Zhang, Renping,Yan, Wei,Wang, Xiaoliang,et al. Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation, Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation[J]. journal of semiconductors, Journal of Semiconductors,2011, 2011,32, 32(6):64001, 64001. |
| APA | Zhang, Renping,Yan, Wei,Wang, Xiaoliang,Yang, Fuhua,&Zhang, R..(2011).Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation.journal of semiconductors,32(6),64001. |
| MLA | Zhang, Renping,et al."Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation".journal of semiconductors 32.6(2011):64001. |
入库方式： OAI收割
来源：半导体研究所
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