Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy
文献类型：期刊论文
| ; | |
| 作者 | He, Jifang; Shang, Xiangjun; Li, Mifeng; Zhu, Yan; Chang, Xiuying; Ni, Haiqiao; Xu, Yingqiang; Niu, Zhichuan; He, J.(hejifang@semi.ac.cn) |
| 刊名 | journal of semiconductors
 ; Journal of Semiconductors
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 32期号:4页码:43004 |
| 关键词 | Atomic force microscopy Buffer layers Epitaxial growth Gallium alloys Gallium arsenide Germanium Growth temperature High resolution transmission electron microscopy Molecular beam epitaxy Molecular beams Semiconducting gallium Semiconductor device structures Semiconductor quantum wells Atomic Force Microscopy Buffer Layers Epitaxial Growth Gallium Alloys Gallium Arsenide Germanium Growth Temperature High Resolution Transmission Electron Microscopy Molecular Beam Epitaxy Molecular Beams Semiconducting Gallium Semiconductor Device Structures Semiconductor Quantum Wells |
| ISSN号 | 16744926 ; 16744926 |
| 通讯作者 | he, j.(hejifang@semi.ac.cn) |
| 英文摘要 | Molecular beam epitaxy growth of an InxGa1-xAs/GaAs quantum well(QW) structure(x equals to0.17 or0.3) on offcut(100) Ge substrate has been investigated. The samples were characterized by atomic force microscopy, photoluminescence(PL), and high resolution transmission electron microscopy. High temperature annealing of the Ge substrate is necessary to grow GaAs buffer layer without anti-phase domains. During the subsequent growth of the GaAs buffer layer and an InxGa1-xAs/GaAs QW structure, temperature plays a key role. The mechanism by which temperature influences the material quality is discussed. High quality InxGa1-xAs/GaAs QW structure samples on Ge substrate with high PL intensity, narrow PL linewidth and flat surface morphology have been achieved by optimizing growth temperatures. Our results show promising device applications for III- V compound semiconductor materials grown on Ge substrates.?2011 Chinese Institute of Electronics. |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | EI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2012-06-14 ; 2012-06-14 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23058]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 通讯作者 | He, J.(hejifang@semi.ac.cn) |
| 推荐引用方式 GB/T 7714 | He, Jifang,Shang, Xiangjun,Li, Mifeng,et al. Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy, Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy[J]. journal of semiconductors, Journal of Semiconductors,2011, 2011,32, 32(4):43004, 43004. |
| APA | He, Jifang.,Shang, Xiangjun.,Li, Mifeng.,Zhu, Yan.,Chang, Xiuying.,...&He, J..(2011).Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy.journal of semiconductors,32(4),43004. |
| MLA | He, Jifang,et al."Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy".journal of semiconductors 32.4(2011):43004. |
入库方式： OAI收割
来源：半导体研究所
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