A novel monolithic ultraviolet image sensor based on a standard CMOS process
文献类型:期刊论文
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作者 | Li, Guike; Feng, Peng; Wu, Nanjian; Li, G.(liguike@semi.ac.cn) |
刊名 | journal of semiconductors
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出版日期 | 2011 ; 2011 |
卷号 | 32期号:10页码:105008 |
关键词 | CMOS integrated circuits Digital control systems Pixels Sensors Space applications Standards Cmos Integrated Circuits Digital Control Systems Pixels Sensors Space Applications Standards |
ISSN号 | 16744926 ; 16744926 |
通讯作者 | li, g.(liguike@semi.ac.cn) |
英文摘要 | We present a monolithic ultraviolet(UV) image sensor based on a standard CMOS process. A compact UV sensitive device structure is designed as a pixel for the image sensor. This UV image sensor consists of a CMOS pixel array, high-voltage switches, a readout circuit and a digital control circuit. A16×16 image sensor prototype chip is implemented in a0.18μm standard CMOS logic process. The pixel and image sensor were measured. Experimental results demonstrate that the image sensor has a high sensitivity of0.072 V/(mJ/cm2) and can capture a UV image. It is suitable for large-scale monolithic bio-medical and space applications.?2011 Chinese Institute of Electronics. |
学科主题 | 半导体物理 ; 半导体物理 |
收录类别 | EI |
语种 | 英语 ; 英语 |
公开日期 | 2012-06-14 ; 2012-06-14 |
源URL | [http://ir.semi.ac.cn/handle/172111/23060] ![]() |
专题 | 半导体研究所_半导体超晶格国家重点实验室 |
通讯作者 | Li, G.(liguike@semi.ac.cn) |
推荐引用方式 GB/T 7714 | Li, Guike,Feng, Peng,Wu, Nanjian,et al. A novel monolithic ultraviolet image sensor based on a standard CMOS process, A novel monolithic ultraviolet image sensor based on a standard CMOS process[J]. journal of semiconductors, Journal of Semiconductors,2011, 2011,32, 32(10):105008, 105008. |
APA | Li, Guike,Feng, Peng,Wu, Nanjian,&Li, G..(2011).A novel monolithic ultraviolet image sensor based on a standard CMOS process.journal of semiconductors,32(10),105008. |
MLA | Li, Guike,et al."A novel monolithic ultraviolet image sensor based on a standard CMOS process".journal of semiconductors 32.10(2011):105008. |
入库方式: OAI收割
来源:半导体研究所
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