Formation of shallow acceptors in ZnO doped by lithium with the addition of nitrogen
文献类型：期刊论文
| ; | |
| 作者 | Gai, Yanqin; Tang, Gang; Li, Jingbo; Gai, Y.(yqgai@semi.ac.cn) |
| 刊名 | journal of physics and chemistry of solids
 ; Journal of Physics and Chemistry of Solids
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 72期号:6页码:725-729 |
| 关键词 | Activation energy Binding energy Calculations Complexation Doping(additives) Electronic structure Zinc Zinc oxide Activation Energy Binding Energy Calculations Complexation Doping(Additives) Electronic Structure Zinc Zinc Oxide |
| ISSN号 | 00223697 ; 00223697 |
| 通讯作者 | gai, y.(yqgai@semi.ac.cn) |
| 英文摘要 | We performed first-principle total-energy calculations to investigate the mechanism for the realization of high quality p-type ZnO codoped with lithium and nitrogen. We find that the higher hole concentrations measured in the codoped ZnO is related to decreased ionization energy of acceptors and reduction of compensations. The dual acceptor NOLiZn complex proposed in experiments is unstable. While in the(LiIN O)LiZn complex, where acceptor LiZn binds to the passivated(LiINO) complex is stable and acts as a single acceptor. The activation energy of this complex is about60 meV lower than that of LiZn in Li-monodoped ZnO. The formation of inactive(LiINO) complexes creates a fully occupied impurity band just above the valence band maximum of ZnO. Thus Li atoms binding to this complex is activated by the electrons from the complex state rather than from the host states, accounting for decreased activation energy. Besides, Li I+ and NO- bind tightly through the Coulomb interaction. Such binding will suppress the amount of compensating donor LiI and limit the compensation for the desired acceptor Li Zn.?2011 Elsevier Ltd. All rights reserved. |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | EI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2012-06-14 ; 2012-06-14 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23061]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 通讯作者 | Gai, Y.(yqgai@semi.ac.cn) |
| 推荐引用方式 GB/T 7714 | Gai, Yanqin,Tang, Gang,Li, Jingbo,et al. Formation of shallow acceptors in ZnO doped by lithium with the addition of nitrogen, Formation of shallow acceptors in ZnO doped by lithium with the addition of nitrogen[J]. journal of physics and chemistry of solids, Journal of Physics and Chemistry of Solids,2011, 2011,72, 72(6):725-729, 725-729. |
| APA | Gai, Yanqin,Tang, Gang,Li, Jingbo,&Gai, Y..(2011).Formation of shallow acceptors in ZnO doped by lithium with the addition of nitrogen.journal of physics and chemistry of solids,72(6),725-729. |
| MLA | Gai, Yanqin,et al."Formation of shallow acceptors in ZnO doped by lithium with the addition of nitrogen".journal of physics and chemistry of solids 72.6(2011):725-729. |
入库方式： OAI收割
来源：半导体研究所
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