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High-mobility germanium-tin(GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370C process modules
文献类型：期刊论文
| 作者 | Han, Genquan ; Su, Shaojian ; Zhan, Chunlei ; Zhou, Qian ; Yang, Yue ; Wang, Lanxiang ; Guo, Pengfei ; Wei, Wang ; Wong, Choun Pei ; Shen, Ze Xiang ; Cheng, Buwen ; Yeo, Yee-Chia |
| 刊名 | technical digest- international electron devices meeting, iedm
 |
| 出版日期 | 2011 |
| 页码 | 16.7.1-16.7.3 |
| 关键词 | Electron devices Germanium Tin |
| ISSN号 | 01631918 |
| 通讯作者 | han, g. |
| 学科主题 | 光电子学 |
| 收录类别 | EI |
| 语种 | 英语 |
| 公开日期 | 2012-06-13 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22942]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Han, Genquan,Su, Shaojian,Zhan, Chunlei,et al. High-mobility germanium-tin(GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370C process modules[J]. technical digest- international electron devices meeting, iedm,2011:16.7.1-16.7.3. |
| APA | Han, Genquan.,Su, Shaojian.,Zhan, Chunlei.,Zhou, Qian.,Yang, Yue.,...&Yeo, Yee-Chia.(2011).High-mobility germanium-tin(GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370C process modules.technical digest- international electron devices meeting, iedm,16.7.1-16.7.3. |
| MLA | Han, Genquan,et al."High-mobility germanium-tin(GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370C process modules".technical digest- international electron devices meeting, iedm (2011):16.7.1-16.7.3. |
入库方式： OAI收割
来源：半导体研究所
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