Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As
文献类型：期刊论文
| 作者 | Hu, Weixuan ; Cheng, Buwen ; Xue, Chunlai ; Su, Shaojian ; Liu, Zhi ; Li, Yaming ; Wang, Qiming |
| 刊名 | ieee international conference on group iv photonics gfp
 |
| 出版日期 | 2011 |
| 页码 | 314-316 |
| ISSN号 | 19492081 |
| 关键词 | Epitaxial growth Germanium Indium Photonics Semiconducting silicon compounds Silicon |
| 通讯作者 | cheng, b.(cbw@semi.ac.cn) |
| 学科主题 | 光电子学 |
| 收录类别 | EI |
| 语种 | 英语 |
| 公开日期 | 2012-06-13 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22948]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Hu, Weixuan,Cheng, Buwen,Xue, Chunlai,et al. Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As[J]. ieee international conference on group iv photonics gfp,2011:314-316. |
| APA | Hu, Weixuan.,Cheng, Buwen.,Xue, Chunlai.,Su, Shaojian.,Liu, Zhi.,...&Wang, Qiming.(2011).Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As.ieee international conference on group iv photonics gfp,314-316. |
| MLA | Hu, Weixuan,et al."Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As".ieee international conference on group iv photonics gfp (2011):314-316. |
入库方式： OAI收割
来源：半导体研究所
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