Effects of grain size on resistance and transmittance transition of vanadium oxide thin film
文献类型：期刊论文
| 作者 | Liang, Ji-Ran ; Hu, Ming ; Kan, Qiang ; Chen, Tao ; Liang, Xiu-Qin ; Chen, Hong-Da |
| 刊名 | cailiao gongcheng/journal of materials engineering
 |
| 出版日期 | 2011 |
| 期号 | 4页码:58-62+74 |
| 关键词 | Annealing Electric properties Grain size and shape Optical transitions Oxide films Oxides Thin films Vanadium Vanadium alloys Vanadium compounds |
| ISSN号 | 10014381 |
| 通讯作者 | liang, j.-r.(liang_jiran@tju.edu.cn) |
| 学科主题 | 光电子学 |
| 收录类别 | EI |
| 语种 | 中文 |
| 公开日期 | 2012-06-13 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22956]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Liang, Ji-Ran,Hu, Ming,Kan, Qiang,et al. Effects of grain size on resistance and transmittance transition of vanadium oxide thin film[J]. cailiao gongcheng/journal of materials engineering,2011(4):58-62+74. |
| APA | Liang, Ji-Ran,Hu, Ming,Kan, Qiang,Chen, Tao,Liang, Xiu-Qin,&Chen, Hong-Da.(2011).Effects of grain size on resistance and transmittance transition of vanadium oxide thin film.cailiao gongcheng/journal of materials engineering(4),58-62+74. |
| MLA | Liang, Ji-Ran,et al."Effects of grain size on resistance and transmittance transition of vanadium oxide thin film".cailiao gongcheng/journal of materials engineering .4(2011):58-62+74. |
入库方式： OAI收割
来源：半导体研究所
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