Growth of high quality Ge epitaxial films on Si substrate by low temperature buffer technique
文献类型：期刊论文
| 作者 | Zhou, Zhi-Wen ; He, Jing-Kai ; Li, Cheng ; Yu, Jin-Zhong |
| 刊名 | guangdianzi jiguang/journal of optoelectronics laser
 |
| 出版日期 | 2011 |
| 卷号 | 22期号:7页码:1030-1033 |
| ISSN号 | 10050086 |
| 关键词 | Atomic force microscopy Atomic spectroscopy Chemical vapor deposition Diffraction Epitaxial growth Germanium Raman spectroscopy Semiconducting silicon compounds Substrates Surface morphology Ultrahigh vacuum X ray diffraction |
| 通讯作者 | zhou, z.-w.(zhouzw@sziit.com.cn) |
| 学科主题 | 光电子学 |
| 收录类别 | EI |
| 语种 | 中文 |
| 公开日期 | 2012-06-13 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22968]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhou, Zhi-Wen,He, Jing-Kai,Li, Cheng,et al. Growth of high quality Ge epitaxial films on Si substrate by low temperature buffer technique[J]. guangdianzi jiguang/journal of optoelectronics laser,2011,22(7):1030-1033. |
| APA | Zhou, Zhi-Wen,He, Jing-Kai,Li, Cheng,&Yu, Jin-Zhong.(2011).Growth of high quality Ge epitaxial films on Si substrate by low temperature buffer technique.guangdianzi jiguang/journal of optoelectronics laser,22(7),1030-1033. |
| MLA | Zhou, Zhi-Wen,et al."Growth of high quality Ge epitaxial films on Si substrate by low temperature buffer technique".guangdianzi jiguang/journal of optoelectronics laser 22.7(2011):1030-1033. |
入库方式： OAI收割
来源：半导体研究所
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