Schottky barrier light emitting diode in standard CMOS technology
文献类型：期刊论文
| 作者 | Huang, Beiju ; Wang, Wei ; Dong, Zan ; Zhang, Zanyun ; Guo, Weilian ; Chen, Hongda |
| 刊名 | group iv photonics (gfp), 2011 8th ieee international conference on
 |
| 出版日期 | 2011 |
| 页码 | 296-298 |
| 关键词 | CMOS integrated circuits Diodes Light Light emission Photonics Schottky barrier diodes Semiconducting silicon compounds Semiconductor diodes |
| ISSN号 | 19492081 |
| 通讯作者 | huang, b.(bjhuang@semi.ac.cn) |
| 学科主题 | 光电子学 |
| 收录类别 | EI |
| 语种 | 英语 |
| 公开日期 | 2012-06-13 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22972]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Huang, Beiju,Wang, Wei,Dong, Zan,et al. Schottky barrier light emitting diode in standard CMOS technology[J]. group iv photonics (gfp), 2011 8th ieee international conference on,2011:296-298. |
| APA | Huang, Beiju,Wang, Wei,Dong, Zan,Zhang, Zanyun,Guo, Weilian,&Chen, Hongda.(2011).Schottky barrier light emitting diode in standard CMOS technology.group iv photonics (gfp), 2011 8th ieee international conference on,296-298. |
| MLA | Huang, Beiju,et al."Schottky barrier light emitting diode in standard CMOS technology".group iv photonics (gfp), 2011 8th ieee international conference on (2011):296-298. |
入库方式： OAI收割
来源：半导体研究所
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