Influence of oxidation on residual strain relaxation of SiGe film grown on SOI substrate
文献类型：期刊论文
| 作者 | Jin, Bo (Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences) ; Wang, Xi ; Chen, Jing ; Zhang, Feng ; Cheng, Xinli ; Chen, Zhijun |
| 刊名 | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, v 27, n 1, January, 2006, p 86-90 Language: Chinese
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| 出版日期 | 2006 |
| 卷号 | 27期号:1页码:86-90 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-06-13 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/109070]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Jin, Bo ,Wang, Xi,Chen, Jing,et al. Influence of oxidation on residual strain relaxation of SiGe film grown on SOI substrate[J]. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, v 27, n 1, January, 2006, p 86-90 Language: Chinese,2006,27(1):86-90. |
| APA | Jin, Bo ,Wang, Xi,Chen, Jing,Zhang, Feng,Cheng, Xinli,&Chen, Zhijun.(2006).Influence of oxidation on residual strain relaxation of SiGe film grown on SOI substrate.Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, v 27, n 1, January, 2006, p 86-90 Language: Chinese,27(1),86-90. |
| MLA | Jin, Bo ,et al."Influence of oxidation on residual strain relaxation of SiGe film grown on SOI substrate".Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, v 27, n 1, January, 2006, p 86-90 Language: Chinese 27.1(2006):86-90. |
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