中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
A novel approach to compare the charge buildup induced by Co-60 and X-ray radiation in SOI buried oxides

文献类型:期刊论文

作者Tian, H. (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences) ; Zhang, Zh.X. ; Zhang, E.X. ; He, W. ; Yang, H. ; Yu, W.J. ; Wang, X
刊名ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2007, p 257-259
出版日期2007
页码257-259
收录类别SCI
语种英语
公开日期2012-06-13
源URL[http://ir.sim.ac.cn/handle/331004/109075]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Tian, H. ,Zhang, Zh.X.,Zhang, E.X.,et al. A novel approach to compare the charge buildup induced by Co-60 and X-ray radiation in SOI buried oxides[J]. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2007, p 257-259,2007:257-259.
APA Tian, H. .,Zhang, Zh.X..,Zhang, E.X..,He, W..,Yang, H..,...&Wang, X.(2007).A novel approach to compare the charge buildup induced by Co-60 and X-ray radiation in SOI buried oxides.ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2007, p 257-259,257-259.
MLA Tian, H. ,et al."A novel approach to compare the charge buildup induced by Co-60 and X-ray radiation in SOI buried oxides".ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2007, p 257-259 (2007):257-259.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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