A novel approach to compare the charge buildup induced by Co-60 and X-ray radiation in SOI buried oxides
文献类型：期刊论文
| 作者 | Tian, H. (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences) ; Zhang, Zh.X. ; Zhang, E.X. ; He, W. ; Yang, H. ; Yu, W.J. ; Wang, X |
| 刊名 | ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2007, p 257-259
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| 出版日期 | 2007 |
| 页码 | 257-259 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-06-13 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/109075]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Tian, H. ,Zhang, Zh.X.,Zhang, E.X.,et al. A novel approach to compare the charge buildup induced by Co-60 and X-ray radiation in SOI buried oxides[J]. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2007, p 257-259,2007:257-259. |
| APA | Tian, H. .,Zhang, Zh.X..,Zhang, E.X..,He, W..,Yang, H..,...&Wang, X.(2007).A novel approach to compare the charge buildup induced by Co-60 and X-ray radiation in SOI buried oxides.ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2007, p 257-259,257-259. |
| MLA | Tian, H. ,et al."A novel approach to compare the charge buildup induced by Co-60 and X-ray radiation in SOI buried oxides".ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2007, p 257-259 (2007):257-259. |
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