SiGe-on-insulator fabricated by oxidation enhanced SIMOX
文献类型:期刊论文
作者 | Chen, Zhi-Jun (Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences) ; Zhang, Feng ; Wang, Yong-Jin ; Jin, Bo ; Chen, Jing ; Zhang, Zheng-Xuan ; Wang, Xi |
刊名 | Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices, v 12, n 1, February, 2006, p 1-4 Language: Chinese
![]() |
出版日期 | 2006 |
卷号 | 12期号:1页码:1-4 |
收录类别 | SCI |
公开日期 | 2012-06-13 |
源URL | [http://ir.sim.ac.cn/handle/331004/109078] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Chen, Zhi-Jun ,Zhang, Feng,Wang, Yong-Jin,et al. SiGe-on-insulator fabricated by oxidation enhanced SIMOX[J]. Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices, v 12, n 1, February, 2006, p 1-4 Language: Chinese,2006,12(1):1-4. |
APA | Chen, Zhi-Jun .,Zhang, Feng.,Wang, Yong-Jin.,Jin, Bo.,Chen, Jing.,...&Wang, Xi.(2006).SiGe-on-insulator fabricated by oxidation enhanced SIMOX.Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices, v 12, n 1, February, 2006, p 1-4 Language: Chinese,12(1),1-4. |
MLA | Chen, Zhi-Jun ,et al."SiGe-on-insulator fabricated by oxidation enhanced SIMOX".Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices, v 12, n 1, February, 2006, p 1-4 Language: Chinese 12.1(2006):1-4. |
入库方式: OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。