中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
SiGe-on-insulator fabricated by oxidation enhanced SIMOX

文献类型:期刊论文

作者Chen, Zhi-Jun (Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences) ; Zhang, Feng ; Wang, Yong-Jin ; Jin, Bo ; Chen, Jing ; Zhang, Zheng-Xuan ; Wang, Xi
刊名Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices, v 12, n 1, February, 2006, p 1-4 Language: Chinese
出版日期2006
卷号12期号:1页码:1-4
收录类别SCI
公开日期2012-06-13
源URL[http://ir.sim.ac.cn/handle/331004/109078]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Chen, Zhi-Jun ,Zhang, Feng,Wang, Yong-Jin,et al. SiGe-on-insulator fabricated by oxidation enhanced SIMOX[J]. Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices, v 12, n 1, February, 2006, p 1-4 Language: Chinese,2006,12(1):1-4.
APA Chen, Zhi-Jun .,Zhang, Feng.,Wang, Yong-Jin.,Jin, Bo.,Chen, Jing.,...&Wang, Xi.(2006).SiGe-on-insulator fabricated by oxidation enhanced SIMOX.Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices, v 12, n 1, February, 2006, p 1-4 Language: Chinese,12(1),1-4.
MLA Chen, Zhi-Jun ,et al."SiGe-on-insulator fabricated by oxidation enhanced SIMOX".Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices, v 12, n 1, February, 2006, p 1-4 Language: Chinese 12.1(2006):1-4.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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