SiGe-on-insulator fabricated by oxidation enhanced SIMOX
文献类型：期刊论文
| 作者 | Chen, Zhi-Jun (Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences) ; Zhang, Feng ; Wang, Yong-Jin ; Jin, Bo ; Chen, Jing ; Zhang, Zheng-Xuan ; Wang, Xi |
| 刊名 | Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices, v 12, n 1, February, 2006, p 1-4 Language: Chinese
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| 出版日期 | 2006 |
| 卷号 | 12期号:1页码:1-4 |
| 收录类别 | SCI |
| 公开日期 | 2012-06-13 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/109078]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, Zhi-Jun ,Zhang, Feng,Wang, Yong-Jin,et al. SiGe-on-insulator fabricated by oxidation enhanced SIMOX[J]. Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices, v 12, n 1, February, 2006, p 1-4 Language: Chinese,2006,12(1):1-4. |
| APA | Chen, Zhi-Jun .,Zhang, Feng.,Wang, Yong-Jin.,Jin, Bo.,Chen, Jing.,...&Wang, Xi.(2006).SiGe-on-insulator fabricated by oxidation enhanced SIMOX.Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices, v 12, n 1, February, 2006, p 1-4 Language: Chinese,12(1),1-4. |
| MLA | Chen, Zhi-Jun ,et al."SiGe-on-insulator fabricated by oxidation enhanced SIMOX".Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices, v 12, n 1, February, 2006, p 1-4 Language: Chinese 12.1(2006):1-4. |
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