中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Enhanced field electron emission from nitrogen doped tetrahedral amorphous carbon film

文献类型:期刊论文

作者J.P.Zhao, Z.Y.Chen, X.Wang, S.Q.Yang, X.H.Liu, T.S.Shi, J.Jang, K.C.Park and S.C.Zou
刊名Proc. IEEE 1999, 963-965;Presented at the XIIth International Conference on Ion Implantation Technology '98, 18-20 June, 1998, Kyoto, Japan
出版日期1999
页码963-965
语种英语
公开日期2012-06-19
源URL[http://ir.sim.ac.cn/handle/331004/109089]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
J.P.Zhao, Z.Y.Chen, X.Wang, S.Q.Yang, X.H.Liu, T.S.Shi, J.Jang, K.C.Park and S.C.Zou. Enhanced field electron emission from nitrogen doped tetrahedral amorphous carbon film[J]. Proc. IEEE 1999, 963-965;Presented at the XIIth International Conference on Ion Implantation Technology '98, 18-20 June, 1998, Kyoto, Japan,1999:963-965.
APA J.P.Zhao, Z.Y.Chen, X.Wang, S.Q.Yang, X.H.Liu, T.S.Shi, J.Jang, K.C.Park and S.C.Zou.(1999).Enhanced field electron emission from nitrogen doped tetrahedral amorphous carbon film.Proc. IEEE 1999, 963-965;Presented at the XIIth International Conference on Ion Implantation Technology '98, 18-20 June, 1998, Kyoto, Japan,963-965.
MLA J.P.Zhao, Z.Y.Chen, X.Wang, S.Q.Yang, X.H.Liu, T.S.Shi, J.Jang, K.C.Park and S.C.Zou."Enhanced field electron emission from nitrogen doped tetrahedral amorphous carbon film".Proc. IEEE 1999, 963-965;Presented at the XIIth International Conference on Ion Implantation Technology '98, 18-20 June, 1998, Kyoto, Japan (1999):963-965.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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