Enhanced field electron emission from nitrogen doped tetrahedral amorphous carbon film
文献类型:期刊论文
作者 | J.P.Zhao, Z.Y.Chen, X.Wang, S.Q.Yang, X.H.Liu, T.S.Shi, J.Jang, K.C.Park and S.C.Zou |
刊名 | Proc. IEEE 1999, 963-965;Presented at the XIIth International Conference on Ion Implantation Technology '98, 18-20 June, 1998, Kyoto, Japan
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出版日期 | 1999 |
页码 | 963-965 |
语种 | 英语 |
公开日期 | 2012-06-19 |
源URL | [http://ir.sim.ac.cn/handle/331004/109089] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | J.P.Zhao, Z.Y.Chen, X.Wang, S.Q.Yang, X.H.Liu, T.S.Shi, J.Jang, K.C.Park and S.C.Zou. Enhanced field electron emission from nitrogen doped tetrahedral amorphous carbon film[J]. Proc. IEEE 1999, 963-965;Presented at the XIIth International Conference on Ion Implantation Technology '98, 18-20 June, 1998, Kyoto, Japan,1999:963-965. |
APA | J.P.Zhao, Z.Y.Chen, X.Wang, S.Q.Yang, X.H.Liu, T.S.Shi, J.Jang, K.C.Park and S.C.Zou.(1999).Enhanced field electron emission from nitrogen doped tetrahedral amorphous carbon film.Proc. IEEE 1999, 963-965;Presented at the XIIth International Conference on Ion Implantation Technology '98, 18-20 June, 1998, Kyoto, Japan,963-965. |
MLA | J.P.Zhao, Z.Y.Chen, X.Wang, S.Q.Yang, X.H.Liu, T.S.Shi, J.Jang, K.C.Park and S.C.Zou."Enhanced field electron emission from nitrogen doped tetrahedral amorphous carbon film".Proc. IEEE 1999, 963-965;Presented at the XIIth International Conference on Ion Implantation Technology '98, 18-20 June, 1998, Kyoto, Japan (1999):963-965. |
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