InAs/GaSb superlattices grown by LP-MOCVD for similar to 10 mu m wavelength infrared range
文献类型：期刊论文
| 作者 | YinFei
|
| 刊名 | infrared physics & technology
 |
| 出版日期 | 2011 |
| 卷号 | 54期号:6页码:478-481 |
| 关键词 | InAs/GaSb superlattices InAsSb interface layer Growth temperature LP-MOCVD |
| ISSN号 | 1350-4495 |
| 通讯作者 | jingzhi yin |
| 学科主题 | instruments & instrumentation; optics; physics |
| 收录类别 | SCI ; EI |
| 资助信息 | national natural science foundation of china;national high technology research and development program ("863" program) of china;science and technology office, jilin province |
| 原文出处 | http://www.sciencedirect.com/science/article/pii/s1350449511000971 |
| 语种 | 英语 |
| 公开日期 | 2012-06-29 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/19940]  |
| 专题 | 西安光学精密机械研究所_光电子学研究室 |
| 推荐引用方式 GB/T 7714 | YinFei. InAs/GaSb superlattices grown by LP-MOCVD for similar to 10 mu m wavelength infrared range[J]. infrared physics & technology,2011,54(6):478-481. |
| APA | YinFei.(2011).InAs/GaSb superlattices grown by LP-MOCVD for similar to 10 mu m wavelength infrared range.infrared physics & technology,54(6),478-481. |
| MLA | YinFei."InAs/GaSb superlattices grown by LP-MOCVD for similar to 10 mu m wavelength infrared range".infrared physics & technology 54.6(2011):478-481. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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