Isotopic mass effects for low-energy channeling in a silicon crystal
文献类型：期刊论文
| 作者 | Zheng, Li-Ping（郑里平） ; Zhu, Zhi-Yuan（朱志远） ; Li, Yong ; Yan, Long（闫隆） ; Zhu, De-Zhang（朱德彰） |
| 刊名 | RADIATION EFFECTS AND DEFECTS IN SOLIDS
 |
| 出版日期 | 2011 |
| 卷号 | 166期号:11页码:861 |
| ISSN号 | 1042-0150 |
| 英文摘要 | Monte Carlo (MC) simulations have been used to study the low-energy channeling of (10)B and (11)B ions along the [100] axis in Si crystal. MC simulations show that the critical angle Psi(C) approximate to 15.3(keV/E)(1/2) (in degrees) for the channeling of isotopic (10)B ions and Psi(C) = 14.5(keV/E)(1/2) (in degrees) for the channeling of isotopic (11)B ions, where E is the incident energy. This means that (Psi(C) (for 10B ions)/Psi(C for 11B ions)) approximate to (15.3/14.5) approximate to (11/10)(1/2). |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000296665900003 |
| 公开日期 | 2012-07-04 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/9535]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 推荐引用方式 GB/T 7714 | Zheng, Li-Ping,Zhu, Zhi-Yuan,Li, Yong,et al. Isotopic mass effects for low-energy channeling in a silicon crystal[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS,2011,166(11):861. |
| APA | Zheng, Li-Ping,Zhu, Zhi-Yuan,Li, Yong,Yan, Long,&Zhu, De-Zhang.(2011).Isotopic mass effects for low-energy channeling in a silicon crystal.RADIATION EFFECTS AND DEFECTS IN SOLIDS,166(11),861. |
| MLA | Zheng, Li-Ping,et al."Isotopic mass effects for low-energy channeling in a silicon crystal".RADIATION EFFECTS AND DEFECTS IN SOLIDS 166.11(2011):861. |
入库方式： OAI收割
来源：上海应用物理研究所
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