Threshold concentration for H blistering in defect free W
文献类型：期刊论文
| 作者 | Luo, GN
|
| 刊名 | journal of nuclear materials
 |
| 出版日期 | 2012 |
| 中文摘要 | lattice distortion induced by high concentration of h is believed to be precursor of h blistering in single crystalline w (scw) during h isotope irradiation. however, the critical h concentration needed to trigger bond-breaking of metal atoms presents a challenge to measure. using density functional theory, we have calculated the formation energy of a vacancy and a self-interstitial atom (sia) in supersaturated defect-free scw with various h concentrations. when the ratio of h:w exceeds 1:2, the formation of both vacancies and self-interstitials becomes exothermic, meaning that spontaneous formation of micro-voids which can accommodate molecular h-2 will occur. molecular h-2 is not allowed to form, and it is not needed either at the very initial stage of h blistering in scw. with supersaturated h, the free volume at the vacancy or sia is greatly smeared out with severe lattice distortion and more h can be trapped than in the dilute h case. (c) 2011 elsevier b.v. all rights reserved. |
| 学科主题 | 等离子体物理与核聚变研究 |
| 公开日期 | 2012-07-09 |
| 源URL | [http://ir.hfcas.ac.cn/handle/334002/5740]  |
| 专题 | 合肥物质科学研究院_中科院等离子体物理研究所 |
| 推荐引用方式 GB/T 7714 | Luo, GN. Threshold concentration for H blistering in defect free W[J]. journal of nuclear materials,2012. |
| APA | Luo, GN.(2012).Threshold concentration for H blistering in defect free W.journal of nuclear materials. |
| MLA | Luo, GN."Threshold concentration for H blistering in defect free W".journal of nuclear materials (2012). |
入库方式： OAI收割
来源：合肥物质科学研究院
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