Controlled growth of metal-free vertically aligned CNT arrays on SiC surfaces
文献类型：期刊论文
| 作者 | Wang, Zhen1; Fu, Qiang1; Xu, Xuejun1; Zhang, Hongbo1; Li, Wenliang2,3; Gao, Min2,3; Tan, Dali1; Bao, Xinhe1 |
| 刊名 | chemical physics letters
 |
| 出版日期 | 2011-02-17 |
| 卷号 | 503期号:4-6页码:247-251 |
| ISSN号 | 待补充 |
| 产权排序 | 1,1 |
| 通讯作者 | 傅强 ; 包信和 |
| 中文摘要 | controlled growth of metal-free vertically aligned cnt arrays on sic surfaces |
| 英文摘要 | the growth of metal-free carbon nanotube (cnt) arrays on sic surface was investigated systematically by using high temperature annealing of 6h-sic(0 0 0 (1) over bar) crystals under various atmospheres, including inert, hydrogen-containing, and oxygen-containing gaseous environments. carbon nanowall structure consisting of graphene sheets standing vertically on the substrate forms under the inert and hydrogen-containing atmospheres, while vertically aligned cnt arrays can be obtained in oxygen-containing atmospheres, such as h(2)o. the comparative studies reveal that oxygen-containing species play a critical role in the formation of cnts on sic. transient sio nanoclusters formed at the c/sic interface are proposed to be the active sites for cnt growth on sic. (c) 2010 elsevier b.v. all rights reserved. |
| WOS标题词 | science & technology ; physical sciences |
| 学科主题 | 物理化学 |
| 类目[WOS] | chemistry, physical ; physics, atomic, molecular & chemical |
| 研究领域[WOS] | chemistry ; physics |
| 关键词[WOS] | walled carbon nanotubes ; catalyst-free growth ; silicon-carbide ; oxygen reduction ; graphene ; decomposition ; graphite |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000287187800013 |
| 公开日期 | 2012-07-09 |
| 源URL | [http://159.226.238.44/handle/321008/115483]  |
| 专题 | 大连化学物理研究所_中国科学院大连化学物理研究所 |
| 作者单位 | 1.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Catalysis, Dalian 116023, Peoples R China 2.Peking Univ, Dept Elect, Beijing 100871, Peoples R China 3.Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Zhen,Fu, Qiang,Xu, Xuejun,et al. Controlled growth of metal-free vertically aligned CNT arrays on SiC surfaces[J]. chemical physics letters,2011,503(4-6):247-251. |
| APA | Wang, Zhen.,Fu, Qiang.,Xu, Xuejun.,Zhang, Hongbo.,Li, Wenliang.,...&Bao, Xinhe.(2011).Controlled growth of metal-free vertically aligned CNT arrays on SiC surfaces.chemical physics letters,503(4-6),247-251. |
| MLA | Wang, Zhen,et al."Controlled growth of metal-free vertically aligned CNT arrays on SiC surfaces".chemical physics letters 503.4-6(2011):247-251. |
入库方式： OAI收割
来源：大连化学物理研究所
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