X-ray detectors based on Fe doped GaN photoconductors
文献类型：期刊论文
| 作者 | Fu, K (付凯)
|
| 刊名 | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
 |
| 出版日期 | 2011-01 |
| 卷号 | 5期号:5-6页码:187-189 |
| 关键词 | X-ray detectors Fe doping GaN transient performance signal to noise ratio |
| 通讯作者 | Lu, M (陆敏) |
| 英文摘要 | X-ray detectors based on Fe doped GaN photoconductors have been fabricated. The dark current I(d) and photocurrent I(p) as a function of bias have been investigated and a large I(p)/I(d) ratio of 180 at 200 V has been obtained in spite of optical quenching. The physical mechanism of the transient performance of the photoconductor has been studied through fitting the experimental data. The functions of photocurrent versus acceleration voltage and current of the X-ray source have been measured and discussed. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000291060300007 |
| 公开日期 | 2012-07-23 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/499]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 推荐引用方式 GB/T 7714 | Fu, K . X-ray detectors based on Fe doped GaN photoconductors[J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,2011,5(5-6):187-189. |
| APA | Fu, K .(2011).X-ray detectors based on Fe doped GaN photoconductors.PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,5(5-6),187-189. |
| MLA | Fu, K ."X-ray detectors based on Fe doped GaN photoconductors".PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 5.5-6(2011):187-189. |
入库方式： OAI收割
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