Investigation on phase change behaviors of Si-Sb-Te alloy: The effect of tellurium segregation
文献类型:期刊论文
作者 | Zhou, Xilin ; Wu, Liangcai ; Song, ZT ; Rao, Feng ; Ren, Kun ; Cheng, Yan ; Liu, B ; Yao, Dongning ; Feng, SL ; Chen, Bomy |
刊名 | Materials Research Society Symposium Proceedings.New Functional Materials and Emerging Device Architectures for Nonvolatile Memories
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出版日期 | 2011 |
卷号 | 1337期号:0页码:123-128 |
ISSN号 | 02729172 |
通讯作者 | Zhou, X. |
公开日期 | 2012-08-22 |
源URL | [http://ir.sim.ac.cn/handle/331004/109159] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Zhou, Xilin,Wu, Liangcai,Song, ZT,et al. Investigation on phase change behaviors of Si-Sb-Te alloy: The effect of tellurium segregation[J]. Materials Research Society Symposium Proceedings.New Functional Materials and Emerging Device Architectures for Nonvolatile Memories,2011,1337(0):123-128. |
APA | Zhou, Xilin.,Wu, Liangcai.,Song, ZT.,Rao, Feng.,Ren, Kun.,...&Chen, Bomy.(2011).Investigation on phase change behaviors of Si-Sb-Te alloy: The effect of tellurium segregation.Materials Research Society Symposium Proceedings.New Functional Materials and Emerging Device Architectures for Nonvolatile Memories,1337(0),123-128. |
MLA | Zhou, Xilin,et al."Investigation on phase change behaviors of Si-Sb-Te alloy: The effect of tellurium segregation".Materials Research Society Symposium Proceedings.New Functional Materials and Emerging Device Architectures for Nonvolatile Memories 1337.0(2011):123-128. |
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