Effect of thermal annealing in NH3 ambient on nanoporous n-GaN and subsequent epilayer
文献类型：期刊论文
| 作者 | Wang, Xinzhong ; Yu, Guanghui ; Li, Shiguo ; Wu, Chengguo |
| 刊名 | Applied Mechanics and Materials.Frontiers of Manufacturing and Design Science
 |
| 出版日期 | 2011 |
| 卷号 | 44-47页码:3016-3020 |
| ISSN号 | 16609336 |
| 通讯作者 | Wang, X.(xzwang868@163.com) |
| 收录类别 | EI-254 |
| 语种 | 英语 |
| 公开日期 | 2012-08-22 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/109173]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, Xinzhong,Yu, Guanghui,Li, Shiguo,et al. Effect of thermal annealing in NH3 ambient on nanoporous n-GaN and subsequent epilayer[J]. Applied Mechanics and Materials.Frontiers of Manufacturing and Design Science,2011,44-47:3016-3020. |
| APA | Wang, Xinzhong,Yu, Guanghui,Li, Shiguo,&Wu, Chengguo.(2011).Effect of thermal annealing in NH3 ambient on nanoporous n-GaN and subsequent epilayer.Applied Mechanics and Materials.Frontiers of Manufacturing and Design Science,44-47,3016-3020. |
| MLA | Wang, Xinzhong,et al."Effect of thermal annealing in NH3 ambient on nanoporous n-GaN and subsequent epilayer".Applied Mechanics and Materials.Frontiers of Manufacturing and Design Science 44-47(2011):3016-3020. |
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