Circuit design for 128Mb PCRAM based on 40nm technology
文献类型：期刊论文
| 作者 | Cai, Daolin ; Chen, Houpeng ; Li, Xi ; Wang, Qian ; Song, ZT |
| 刊名 | 2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011.2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011
 |
| 出版日期 | 2011 |
| 期号 | 0页码:74-77 |
| 通讯作者 | Cai, D.(caidl@mail.sim.ac.cn) |
| 公开日期 | 2012-08-22 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/109177]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cai, Daolin,Chen, Houpeng,Li, Xi,et al. Circuit design for 128Mb PCRAM based on 40nm technology[J]. 2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011.2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011,2011(0):74-77. |
| APA | Cai, Daolin,Chen, Houpeng,Li, Xi,Wang, Qian,&Song, ZT.(2011).Circuit design for 128Mb PCRAM based on 40nm technology.2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011.2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011(0),74-77. |
| MLA | Cai, Daolin,et al."Circuit design for 128Mb PCRAM based on 40nm technology".2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011.2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011 .0(2011):74-77. |
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