Effect of gate bias on ESD characteristics in NMOS device
文献类型：期刊论文
| 作者 | He, Yujuan ; En, Yunfei ; Luo, Hongwei ; Xiao, Qingzhong |
| 刊名 | Proceedings - International Symposium on Advanced Packaging Materials.APM 2011 Proceedings - 2011 International Symposium on Advanced Packaging Materials
 |
| 出版日期 | 2011 |
| 期号 | 0页码:360-362 |
| ISSN号 | 15505723 |
| 通讯作者 | He, Y.(heyu0000@126.com) |
| 公开日期 | 2012-08-22 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/109178]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | He, Yujuan,En, Yunfei,Luo, Hongwei,et al. Effect of gate bias on ESD characteristics in NMOS device[J]. Proceedings - International Symposium on Advanced Packaging Materials.APM 2011 Proceedings - 2011 International Symposium on Advanced Packaging Materials,2011(0):360-362. |
| APA | He, Yujuan,En, Yunfei,Luo, Hongwei,&Xiao, Qingzhong.(2011).Effect of gate bias on ESD characteristics in NMOS device.Proceedings - International Symposium on Advanced Packaging Materials.APM 2011 Proceedings - 2011 International Symposium on Advanced Packaging Materials(0),360-362. |
| MLA | He, Yujuan,et al."Effect of gate bias on ESD characteristics in NMOS device".Proceedings - International Symposium on Advanced Packaging Materials.APM 2011 Proceedings - 2011 International Symposium on Advanced Packaging Materials .0(2011):360-362. |
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