Effect of channel width on ESD characteristics of SOI MOS device
文献类型：期刊论文
| 作者 | He, Yujuan ; En, Yunfei ; Luo, Hongwei ; Xiao, Qingzhong |
| 刊名 | ICQR2MSE 2011 - Proceedings of 2011 International Conference on Quality, Reliability, Risk, Maintenance,
 |
| 出版日期 | 2011 |
| 期号 | 0页码:469-471 |
| 通讯作者 | He, Y. |
| 公开日期 | 2012-08-22 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/109182]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | He, Yujuan,En, Yunfei,Luo, Hongwei,et al. Effect of channel width on ESD characteristics of SOI MOS device[J]. ICQR2MSE 2011 - Proceedings of 2011 International Conference on Quality, Reliability, Risk, Maintenance,,2011(0):469-471. |
| APA | He, Yujuan,En, Yunfei,Luo, Hongwei,&Xiao, Qingzhong.(2011).Effect of channel width on ESD characteristics of SOI MOS device.ICQR2MSE 2011 - Proceedings of 2011 International Conference on Quality, Reliability, Risk, Maintenance,(0),469-471. |
| MLA | He, Yujuan,et al."Effect of channel width on ESD characteristics of SOI MOS device".ICQR2MSE 2011 - Proceedings of 2011 International Conference on Quality, Reliability, Risk, Maintenance, .0(2011):469-471. |
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