Influence of poly region extended into field oxide on total ionizing dose effect for deep submicron MOSFET
文献类型：期刊论文
| 作者 | Liu, ZL ; Hu, ZY ; Zhang, ZX ; Shao, H ; Ning, Bingxu ; Chen, M ; Bi, Dawei ; Zou, SC |
| 刊名 | Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS.RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings
 |
| 出版日期 | 2011 |
| 期号 | 0页码:28-35 |
| 通讯作者 | Liu, Z.(liuzhangli@mail.sim.ac.cn) |
| 公开日期 | 2012-08-28 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/109333]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, ZL,Hu, ZY,Zhang, ZX,et al. Influence of poly region extended into field oxide on total ionizing dose effect for deep submicron MOSFET[J]. Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS.RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings,2011(0):28-35. |
| APA | Liu, ZL.,Hu, ZY.,Zhang, ZX.,Shao, H.,Ning, Bingxu.,...&Zou, SC.(2011).Influence of poly region extended into field oxide on total ionizing dose effect for deep submicron MOSFET.Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS.RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings(0),28-35. |
| MLA | Liu, ZL,et al."Influence of poly region extended into field oxide on total ionizing dose effect for deep submicron MOSFET".Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS.RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings .0(2011):28-35. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。