Gate length dependence of the shallow trench isolation leakage current in an irradiated deep submicron NMOSFET
文献类型：期刊论文
| 作者 | Liu, ZL ; Hu, ZY ; Zhang, ZX ; Shao, Hua ; Chen, M ; Bi, Dawei ; Ning, Bingxu ; Zou, SC |
| 刊名 | Journal of Semiconductors.
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| 出版日期 | 2011 |
| 卷号 | 32期号:6 |
| ISSN号 | 16744926 |
| 通讯作者 | Liu, Z.(liuzhangli@mail.sim.ac.cn) |
| 公开日期 | 2012-08-28 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/109334]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, ZL,Hu, ZY,Zhang, ZX,et al. Gate length dependence of the shallow trench isolation leakage current in an irradiated deep submicron NMOSFET[J]. Journal of Semiconductors.,2011,32(6). |
| APA | Liu, ZL.,Hu, ZY.,Zhang, ZX.,Shao, Hua.,Chen, M.,...&Zou, SC.(2011).Gate length dependence of the shallow trench isolation leakage current in an irradiated deep submicron NMOSFET.Journal of Semiconductors.,32(6). |
| MLA | Liu, ZL,et al."Gate length dependence of the shallow trench isolation leakage current in an irradiated deep submicron NMOSFET".Journal of Semiconductors. 32.6(2011). |
入库方式： OAI收割
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