Thermal stability and interface improvement of thin NiSiGe by C+ ion implantation
文献类型：期刊论文
| 作者 | Zhang, B ; Yu, W ; Zhao, QT ; Buca, D ; Hollä ; nder, B ; Hartmann, J.-M. ; Zhang, M ; Wang, X ; Mantl, S. |
| 刊名 | 2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011.2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011
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| 出版日期 | 2011 |
| 期号 | 0 |
| 通讯作者 | Zhao, Q.T.(q.zhao@fz-juelich.de) |
| 公开日期 | 2012-08-28 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/109335]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, B,Yu, W,Zhao, QT,et al. Thermal stability and interface improvement of thin NiSiGe by C+ ion implantation[J]. 2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011.2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011,2011(0). |
| APA | Zhang, B.,Yu, W.,Zhao, QT.,Buca, D.,Hollä.,...&Mantl, S..(2011).Thermal stability and interface improvement of thin NiSiGe by C+ ion implantation.2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011.2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011(0). |
| MLA | Zhang, B,et al."Thermal stability and interface improvement of thin NiSiGe by C+ ion implantation".2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011.2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011 .0(2011). |
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