Dislocation cross-slip in GaN single crystals under nanoindentation
文献类型：期刊论文
| 作者 | Fan, YM (樊英民) ; Yang, H (杨辉); Huang, J (黄俊); Gong, XJ (弓晓晶); Xu, K (徐科); Xu, K (徐科); Zeng, XH (曾雄辉); Wang, JF (王建峰); Zhou, TF (周桃飞); Ren, GQ (任国强)
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| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2011-05-30 |
| 卷号 | 98期号:22 |
| 关键词 | BERKOVICH NANOINDENTATION THIN-FILMS INDENTATION MECHANISMS EPILAYERS |
| 通讯作者 | Xu, K (徐科) |
| 英文摘要 | The dislocation multiplication and movement mechanism in GaN single crystals has been studied using nanoindentation and cathodoluminescence. Dislocation loops can multiply and move from plane to plane by cross-slip, thus producing a wide plastic deformation in GaN during indentation. This mechanism is further supported by the remarkable movement of indentation induced dislocations during annealing. Furthermore, the so-called pop-in events, in which the indenter suddenly enters deeper into the material without the application of any additional force, can be better understood by considering the cross-slip mechanism. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000291405700022 |
| 公开日期 | 2012-08-24 |
| 源URL | [http://58.210.77.100/handle/332007/596]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_测试分析平台 |
| 通讯作者 | Xu, K (徐科); Xu, K (徐科) |
| 推荐引用方式 GB/T 7714 | Fan, YM ,Yang, H ,Huang, J ,et al. Dislocation cross-slip in GaN single crystals under nanoindentation[J]. APPLIED PHYSICS LETTERS,2011,98(22). |
| APA | Fan, YM .,Yang, H .,Huang, J .,Gong, XJ .,Xu, K .,...&Ren, GQ .(2011).Dislocation cross-slip in GaN single crystals under nanoindentation.APPLIED PHYSICS LETTERS,98(22). |
| MLA | Fan, YM ,et al."Dislocation cross-slip in GaN single crystals under nanoindentation".APPLIED PHYSICS LETTERS 98.22(2011). |
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