Structure, Stress State and Piezoelectric Property of GaN Nanopyramid Arrays
文献类型：期刊论文
| 作者 | Gong, XJ (弓晓晶) ; Zhou, TF (周桃飞); Zhong, HJ (钟海舰); Yang, H (杨辉); Qiu, YX (邱永鑫); Ren, GQ (任国强); Huang, J (黄俊); Xu, K (徐科); Wang, JF (王建峰); Xu, K (徐科)
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| 刊名 | APPLIED PHYSICS EXPRESS
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| 出版日期 | 2011-04 |
| 卷号 | 4期号:4 |
| 通讯作者 | Xu, K (徐科) |
| 英文摘要 | GaN nanopyramid (NP) arrays have been fabricated by a convenient electrodeless photoelectrochemical etching method. Transmission electron microscopy measurement indicates that these NPs are composed of crystalline GaN surrounding a dislocation. High-resolution X-ray diffraction and the micro-Raman spectrum reveal a highly compressive stress relaxation in the NPs compared with compressed GaN subfilm. Additionally, negative piezoelectric current pluses are generated from the GaN NPs when the conductive atomic force microscope scans cross the arrays in the contact mode. The result demonstrates that the GaN NP arrays are a promising candidate for nanogenerators. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000289344800018 |
| 公开日期 | 2012-08-24 |
| 源URL | [http://58.210.77.100/handle/332007/598]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_测试分析平台 |
| 通讯作者 | Xu, K (徐科); Xu, K (徐科) |
| 推荐引用方式 GB/T 7714 | Gong, XJ ,Zhou, TF ,Zhong, HJ ,et al. Structure, Stress State and Piezoelectric Property of GaN Nanopyramid Arrays[J]. APPLIED PHYSICS EXPRESS,2011,4(4). |
| APA | Gong, XJ .,Zhou, TF .,Zhong, HJ .,Yang, H .,Qiu, YX .,...&Xu, K .(2011).Structure, Stress State and Piezoelectric Property of GaN Nanopyramid Arrays.APPLIED PHYSICS EXPRESS,4(4). |
| MLA | Gong, XJ ,et al."Structure, Stress State and Piezoelectric Property of GaN Nanopyramid Arrays".APPLIED PHYSICS EXPRESS 4.4(2011). |
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