Defect reduction in (1 1 (2)over-bar 0) nonpolar a-plane GaN grown on r-plane sapphire using TiN interlayers
文献类型:期刊论文
作者 | Xu, SR ; Zhang, JC ; Yang, LA ; Zhou, XW ; Cao, YR ; Zhang, JF ; Xue, JS ; Liu, ZY ; Ma, JC ; Bao, F (包峰) ; Hao, Y |
刊名 | JOURNAL OF CRYSTAL GROWTH |
出版日期 | 2011-07-15 |
卷号 | 327期号:1页码:94-97 |
关键词 | VAPOR-PHASE EPITAXY LIGHT-EMITTING-DIODES OVERGROWTH |
通讯作者 | Hao, Y |
英文摘要 | We report on the use of TiN interlayer to reduce the threading dislocation density in nonpolar a-plane GaN material grown by metal organic chemical vapor deposition (MOCVD), where the interlayer was formed by depositing the Ti metal on a GaN template followed by nitridize. By means of high resolution X-ray diffraction, transmission electron microscopy, and atomic force microscopy analyses, we found that the nonpolar a-plane GaN epitaxial grown on 10 nm-thick TIN interlayer, both on-axis and off-axis, exhibits a significant reduction in the full width at half maximum, the basal plane stacking faults (BSF), the threading dislocation density, and the root-mean-square roughness, respectively. |
收录类别 | SCI ; EI |
语种 | 英语 |
WOS记录号 | WOS:000293551100016 |
公开日期 | 2012-08-24 |
源URL | [http://ir.sinano.ac.cn/handle/332007/604] |
专题 | 苏州纳米技术与纳米仿生研究所_测试分析平台 |
推荐引用方式 GB/T 7714 | Xu, SR,Zhang, JC,Yang, LA,et al. Defect reduction in (1 1 (2)over-bar 0) nonpolar a-plane GaN grown on r-plane sapphire using TiN interlayers[J]. JOURNAL OF CRYSTAL GROWTH,2011,327(1):94-97. |
APA | Xu, SR.,Zhang, JC.,Yang, LA.,Zhou, XW.,Cao, YR.,...&Hao, Y.(2011).Defect reduction in (1 1 (2)over-bar 0) nonpolar a-plane GaN grown on r-plane sapphire using TiN interlayers.JOURNAL OF CRYSTAL GROWTH,327(1),94-97. |
MLA | Xu, SR,et al."Defect reduction in (1 1 (2)over-bar 0) nonpolar a-plane GaN grown on r-plane sapphire using TiN interlayers".JOURNAL OF CRYSTAL GROWTH 327.1(2011):94-97. |
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